512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Features
Parallel NOR Flash Automotive Memory
MT28FW512ABA1xPC-0AAT, MT28FW512ABA1xJS-0AAT,
MT28FW512ABA1xPN-0AAT
Features
• BLANK CHECK operation to verify an erased block
• CYCLIC REDUNDANCY CHECK (CRC) operation to
verify a program pattern
• VPP/WP# protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 512-word block for permanent, secure identification
– Programmed or locked at the factory or by the
customer
• JESD47-compliant
– 100,000 (minimum) ERASE cycles per block
– Data retention: 20 years (TYP)
• Package
– 56-pin TSOP, 14mm x 20mm (JS)
– 64-ball LBGA, 13mm x 11mm (PC)
– 56-ball VFBGA, 7mm x 9mm (PN)
• RoHS-compliant, halogen-free packaging
• Automotive operating temperature
– Ambient: –40°C to 105°C
• Single-level cell (SLC) process technology
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65 - V CC (I/O buffers)
• Asynchronous random/page read
– Page size: 16 words
– Page access: 20ns (VCC = V CCQ = 2.7-3.6V)
– Random access: 105ns (VCC = V CCQ = 2.7-3.6V)
– Random access: 110ns (VCCQ = 1.65-VCC)
• Buffer program (512-word program buffer)
– 2.0 MB/s (TYP) when using full buffer program
– 2.5 MB/s (TYP) when using accelerated buffer
program (VHH)
• Word program: 25us per word (TYP)
• Block erase (128KB): 0.2s (TYP)
• Memory organization
– Uniform blocks: 128KB or 64KW each
– x16 data bus
• Program/erase suspend and resume capability
– Read from another block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, chip erase, and write to
buffer capability
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mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Features
Part Numbering Information
For available options, such as packages or high/low protection, or for further information, contact your Micron
sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by
device type is available at www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Chart
MT
28F
W
512
A
B
A
1
JS –
H
0
A
AT
Micron Technology
Production Status
Device type
Blank = Production
ES = Engineering sample
28F = Embedded Parallel NOR Flash memory
(3V core, page, uniform block)
Operating Temperature
AT = –40°C to +105°C (Grade 2 AEC-Q100)
Voltage
Special Options
W = 2.7–3.6V core; 1.7–3.6V I/O
A = Automotive quality
Density
Security Features
512 = 512Mb
0 = No extra security
Stack
Package
A = Single die
JS = 56-lead TSOP, 14mm x 20mm, lead-free,
halogen-free, RoHS-compliant
PC = 64-ball LBGA, 11mm x 13mm,
lead-free, halogen-free, RoHS-compliant
PN = 56-ball VFBGA, 7mm x 9mm
halogen-free, RoHS-compliant
Device generation
B = Second generation
Die revision
A = Rev. A
Block structure
Configuration
H = High lock
L = Low lock
1 = x16
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mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Features
Contents
Important Notes and Warnings ......................................................................................................................... 7
General Description ......................................................................................................................................... 8
Automatic Power Savings Feature .................................................................................................................. 8
Signal Assignments ......................................................................................................................................... 10
Signal Descriptions ......................................................................................................................................... 13
Memory Organization .................................................................................................................................... 15
Memory Configuration ............................................................................................................................... 15
Memory Map ............................................................................................................................................. 15
Bus Operations ............................................................................................................................................... 16
Read .......................................................................................................................................................... 16
Write .......................................................................................................................................................... 16
Standby ..................................................................................................................................................... 16
Output Disable ........................................................................................................................................... 17
Reset .......................................................................................................................................................... 17
Registers ........................................................................................................................................................ 18
Data Polling Register .................................................................................................................................. 18
Read Status Register ................................................................................................................................... 23
Clear Status Register ................................................................................................................................... 24
Lock Register .............................................................................................................................................. 25
Standard Command Definitions – Address-Data Cycles .................................................................................... 27
READ and AUTO SELECT Operations .............................................................................................................. 29
READ/RESET Command ............................................................................................................................ 29
READ CFI Command .................................................................................................................................. 29
AUTO SELECT Command ........................................................................................................................... 29
Read Electronic Signature ........................................................................................................................... 30
Cyclic Redundancy Check Operation ............................................................................................................... 31
CYCLIC REDUNDANCY CHECK Command ................................................................................................. 31
Cyclic Redundancy Check Operation Command Sequence .......................................................................... 31
Bypass Operations .......................................................................................................................................... 34
UNLOCK BYPASS Command ...................................................................................................................... 34
UNLOCK BYPASS RESET Command ............................................................................................................ 34
Program Operations ....................................................................................................................................... 35
PROGRAM Command ................................................................................................................................ 35
UNLOCK BYPASS PROGRAM Command ..................................................................................................... 35
WRITE TO BUFFER PROGRAM Command .................................................................................................. 35
UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command ....................................................................... 38
WRITE TO BUFFER PROGRAM CONFIRM Command .................................................................................. 38
BUFFERED PROGRAM ABORT AND RESET Command ................................................................................ 38
PROGRAM SUSPEND Command ................................................................................................................ 38
PROGRAM RESUME Command .................................................................................................................. 39
ACCELERATED BUFFERED PROGRAM Operations .......................................................................................... 39
Erase Operations ............................................................................................................................................ 40
CHIP ERASE Command .............................................................................................................................. 40
UNLOCK BYPASS CHIP ERASE Command ................................................................................................... 40
BLOCK ERASE Command ........................................................................................................................... 40
UNLOCK BYPASS BLOCK ERASE Command ................................................................................................ 41
ERASE SUSPEND Command ....................................................................................................................... 41
ERASE RESUME Command ........................................................................................................................ 42
ACCELERATED CHIP ERASE Operations ......................................................................................................... 42
BLANK CHECK Operation .............................................................................................................................. 42
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Features
Device Protection ...........................................................................................................................................
Hardware Protection ..................................................................................................................................
Software Protection ....................................................................................................................................
Volatile Protection Mode .............................................................................................................................
Nonvolatile Protection Mode ......................................................................................................................
Password Protection Mode ..........................................................................................................................
Block Protection Command Definitions – Address-Data Cycles ........................................................................
Protection Operations ....................................................................................................................................
LOCK REGISTER Commands ......................................................................................................................
PASSWORD PROTECTION Commands .......................................................................................................
NONVOLATILE PROTECTION Commands ..................................................................................................
NONVOLATILE PROTECTION BIT LOCK BIT Commands ............................................................................
VOLATILE PROTECTION Commands ..........................................................................................................
EXTENDED MEMORY BLOCK Commands ..................................................................................................
EXIT PROTECTION Command ....................................................................................................................
Common Flash Interface ................................................................................................................................
Power-Up and Reset Characteristics ................................................................................................................
Absolute Ratings and Operating Conditions .....................................................................................................
DC Characteristics ..........................................................................................................................................
Read AC Characteristics ..................................................................................................................................
Write AC Characteristics .................................................................................................................................
Data Polling/Toggle AC Characteristics ............................................................................................................
Program/Erase Characteristics ........................................................................................................................
Package Dimensions .......................................................................................................................................
Revision History .............................................................................................................................................
Rev. H –10/18 .............................................................................................................................................
Rev. G –05/18 .............................................................................................................................................
Rev. F – 11/16 .............................................................................................................................................
Rev. E – 9/15 ...............................................................................................................................................
Rev. D – 01/15 .............................................................................................................................................
Rev. C – 12/14 .............................................................................................................................................
Rev. B – 07/14 .............................................................................................................................................
Rev. A – 05/14 .............................................................................................................................................
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Features
List of Figures
Figure 1: Part Number Chart ............................................................................................................................ 2
Figure 2: Logic Diagram ................................................................................................................................... 9
Figure 3: 56-Pin TSOP (Top View) .................................................................................................................. 10
Figure 4: 64-Ball LBGA (Top View – Balls Down) ............................................................................................. 11
Figure 5: 56-Ball VFBGA (Top View – Balls Down) ........................................................................................... 12
Figure 6: Data Polling Flowchart .................................................................................................................... 20
Figure 7: Toggle Bit Flowchart ........................................................................................................................ 21
Figure 8: Data Polling/Toggle Bit Flowchart .................................................................................................... 22
Figure 9: Lock Register Program Flowchart ..................................................................................................... 26
Figure 10: Boundary Condition of Program Buffer Size .................................................................................... 36
Figure 11: WRITE TO BUFFER PROGRAM Flowchart ...................................................................................... 37
Figure 12: Software Protection Scheme .......................................................................................................... 46
Figure 13: Set/Clear Nonvolatile Protection Bit Algorithm Flowchart ............................................................... 52
Figure 14: Power-Up Timing .......................................................................................................................... 60
Figure 15: Reset AC Timing – No PROGRAM/ERASE Operation in Progress ...................................................... 61
Figure 16: Reset AC Timing During PROGRAM/ERASE Operation .................................................................... 61
Figure 17: AC Measurement Load Circuit ....................................................................................................... 63
Figure 18: AC Measurement I/O Waveform ..................................................................................................... 63
Figure 19: Random Read AC Timing ............................................................................................................... 67
Figure 20: Page Read AC Timing ..................................................................................................................... 67
Figure 21: WE#-Controlled Program AC Timing .............................................................................................. 69
Figure 22: CE#-Controlled Program AC Timing ............................................................................................... 71
Figure 23: Chip/Block Erase AC Timing .......................................................................................................... 72
Figure 24: Accelerated Program AC Timing ..................................................................................................... 72
Figure 25: Data Polling AC Timing .................................................................................................................. 73
Figure 26: Toggle/Alternative Toggle Bit Polling AC Timing .............................................................................. 74
Figure 27: 56-Pin TSOP – 14mm x 20mm (Package Code: JS) ............................................................................ 76
Figure 28: 64-Ball LBGA – 11mm x 13mm (Package Code: PC) ......................................................................... 77
Figure 29: 56-Ball VFBGA 7mm x 9mm (Package Code: PN) ............................................................................. 78
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Features
List of Tables
Table 1: Signal Descriptions ...........................................................................................................................
Table 2: Blocks[511:0] ....................................................................................................................................
Table 3: Bus Operations .................................................................................................................................
Table 4: Data Polling Register Bit Definitions ..................................................................................................
Table 5: Operations and Corresponding Bit Settings ........................................................................................
Table 6: Status Register Definitions ................................................................................................................
Table 7: Lock Register Bit Definitions .............................................................................................................
Table 8: Standard Command Definitions – Address-Data Cycles ......................................................................
Table 9: Block Protection ...............................................................................................................................
Table 10: Read Electronic Signature – 512Mb ..................................................................................................
Table 11: Command Sequence – Range of Blocks ............................................................................................
Table 12: Command Sequence – Entire Chip ..................................................................................................
Table 13: ACCELERATED PROGRAM Requirements and Recommendations ....................................................
Table 14: ACCELERATED CHIP ERASE Requirements and Recommendations .................................................
Table 15: V PP/WP# Functions .........................................................................................................................
Table 16: Block Protection Status ...................................................................................................................
Table 17: Block Protection Command Definitions – Address-Data Cycles .........................................................
Table 18: Extended Memory Block Address and Data ......................................................................................
Table 19: Query Structure Overview ...............................................................................................................
Table 20: CFI Query Identification String ........................................................................................................
Table 21: CFI Query System Interface Information ..........................................................................................
Table 22: Device Geometry Definition ............................................................................................................
Table 23: Primary Algorithm-Specific Extended Query Table ...........................................................................
Table 24: Power-Up Specifications .................................................................................................................
Table 25: Reset AC Specifications ...................................................................................................................
Table 26: Absolute Maximum/Minimum Ratings ............................................................................................
Table 27: Operating Conditions ......................................................................................................................
Table 28: Input/Output Capacitance ..............................................................................................................
Table 29: DC Current Characteristics ..............................................................................................................
Table 30: DC Voltage Characteristics ..............................................................................................................
Table 31: Read AC Characteristics – V CC = V CCQ = 2.7–3.6V ...............................................................................
Table 32: Read AC Characteristics – V CCQ = 1.65V–VCC .....................................................................................
Table 33: WE#-Controlled Write AC Characteristics .........................................................................................
Table 34: CE#-Controlled Write AC Characteristics .........................................................................................
Table 35: Data Polling/Toggle AC Characteristics ............................................................................................
Table 36: Program/Erase Characteristics ........................................................................................................
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Important Notes and Warnings
Important Notes and Warnings
Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,
including without limitation specifications and product descriptions. This document supersedes and replaces all
information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized
by Micron.
Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron
products are not designed or intended for use in automotive applications unless specifically designated by Micron
as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'
fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage
resulting from any use of non-automotive-grade products in automotive applications.
Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage
("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the
Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron
component for any critical application, customer and distributor shall indemnify and hold harmless Micron and
its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,
costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of
product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the
Micron product.
Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,
applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE
WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR
PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included
in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component.
Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential
damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,
breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly
authorized representative.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
General Description
General Description
The device is an asynchronous, uniform block, parallel NOR Flash memory device.
READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode.
The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE
commands are written to the command interface of the memory. An on-chip program/
erase controller simplifies the process of programming or erasing the memory by taking
care of all special operations required to update the memory contents. The end of a
PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards.
CE#, OE#, and WE# control the bus operation of the device and enable a simple connection to most microprocessors, often without additional logic.
The device supports asynchronous random read and page read from all blocks of the
array. It also features an internal program buffer that improves throughput by programming 512 words via one command sequence. A 512-word extended memory block overlaps addresses with array block 0. Users can program this additional space and then
protect it to permanently secure the contents. The device also features different levels of
hardware and software protection to secure blocks from unwanted modification.
Automatic Power Savings Feature
The automatic power savings feature provides low power operation during reads.
After data is read from the memory array and the address lines are quiescent, the automatic power savings feature reduces device current to a low value of ICCAPS.
During automatic power savings mode, average current is measured over 5ms time interval 5μs after the following events happen:
• No internal read, program or erase activity occurring
• RST# is deasserted and CE# is asserted
• All other signals are quiescent and at V SS or V CCQ
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
General Description
Figure 2: Logic Diagram
VCC
VCCQ
VPP/WP#
16
DQ[15:0]
A[MAX:0]
WE#
CE#
OE#
RY/BY#
RST#
VSS
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Signal Assignments
Signal Assignments
Figure 3: 56-Pin TSOP (Top View)
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
A21
VPP/WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
RFU
RFU
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Notes:
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mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
A24
A25
A16
DNU
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
RFU
VCCQ
1. A23 is valid for 256Mb and above; otherwise, it is RFU.
2. A24 is valid for 512Mb and above; otherwise, it is RFU.
3. A25 is valid for 1Gb and above; otherwise, it is RFU.
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Signal Assignments
Figure 4: 64-Ball LBGA (Top View – Balls Down)
1
2
NC
A3
3
4
5
6
7
8
A7 RY/BY# WE#
A9
A13
NC
A4
A17 VPP/WP# RST#
A8
A12
A22
NC
A2
A6
A18
A21
A10
A14
A23
NC
A1
A5
A20
A19
A11
A15
VCCQ
NC
A0
DQ0 DQ2
DQ5
DQ7
A16
VSS
RFU
A24
A
B
NC
C
D
E
F
VCCQ CE# DQ8 DQ10 DQ12 DQ14
G
NC
OE# DQ9 DQ11
VCC
DQ13
DQ15 A25
NC
VSS DQ1 DQ3
DQ4
DQ6
VSS
H
Notes:
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mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
NC
1. A23 is valid for 256Mb and above; otherwise, it is RFU.
2. A24 is valid for 512Mb and above; otherwise, it is RFU.
3. A25 is valid for 1Gb and above; otherwise, it is RFU.
11
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Signal Assignments
Figure 5: 56-Ball VFBGA (Top View – Balls Down)
1
2
3
4
5
6
7
8
A
A7
RFU VPP/WP# WE#
A8
A11
A3
A6
RFU
RST#
A23
A19
A12
A15
A2
A5
A18
RY/BY#
A20
A9
A13
A21
A1
A4
A17
A10
A14
A22
A0
VSS
DQ1
DQ6
RFU
A16
CE#
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
A24
DNU
DQ0
DQ10
VCC
VCCQ
DQ12
DQ7
VSS
DQ8
DQ2
DQ11
RFU
DQ5
DQ14
B
C
D
E
F
G
H
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. A23 is valid for 256Mb and above; otherwise, it is RFU.
2. A24 is valid for 512Mb and above; otherwise, it is RFU.
12
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Signal Descriptions
Signal Descriptions
The signal description table below is a comprehensive list of signals for this device family. All signals listed may not be supported on this device. See Signal Assignments for information specific to this device.
Table 1: Signal Descriptions
Name
Type
Description
A[MAX:0]
Input
Address: Selects the cells in the array to access during READ operations. During WRITE operations, they control the commands sent to the command interface of the program/erase controller.
CE#
Input
Chip enable: Activates the device, enabling READ and WRITE operations to be performed.
When CE# is HIGH, the device goes to standby and data outputs are High-Z.
OE#
Input
Output enable: Active LOW input. OE# LOW enables the data output buffers during READ
cycles. When OE# is HIGH, data outputs are High-Z.
WE#
Input
Write enable: Controls WRITE operations to the device. Address is latched on the falling
edge of WE# and data is latched on the rising edge.
VPP/WP#
Input
VPP/Write Protect: Provides WRITE PROTECT function and VHH function. These functions
protect the lowest or highest block and enable the device to enter unlock bypass mode, respectively. (Refer to Hardware Protection and Bypass Operations for details.)
RST#
Input
Reset: Applies a hardware reset to the device control logic and places it in standby, which is
achieved by holding RST# LOW for at least tPLPH. After RST# goes HIGH, the device is ready
for READ and WRITE operations (after tPHEL or tPHWL, whichever occurs last).
DQ[15:0]
I/O
Data I/O: Outputs the data stored at the selected address during a READ operation. During
WRITE operations, they represent the commands sent to the command interface of the internal state machine.
RY/BY#
Output
Ready busy: Open-drain output that can be used to identify when the device is performing
a PROGRAM or ERASE operation. During PROGRAM or ERASE operations, RY/BY# is LOW,
and is High-Z during read mode, auto select mode, and erase suspend mode.
The use of an open-drain output enables the RY/BY# pins from several devices to be connected to a single pull-up resistor to VCCQ. A low value will then indicate that one (or more) of
the devices is (are) busy. A 10K Ohm or bigger resistor is recommended as pull-up resistor to
achieve 0.1V VOL.
VCC
Supply
Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations.
The device is disabled when VCC ≤ VLKO. If the program/erase controller is programming or
erasing during this time, then the operation aborts and the contents being altered will be
invalid.
A 0.1μF and 0.01µF capacitor should be connected between VCC and VSS to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during PROGRAM and ERASE operations (see DC Characteristics).
VCCQ
Supply
I/O supply voltage: Provides the power supply to the I/O pins and enables all outputs to be
powered independently from VCC.
A 0.1μF and 0.01µF capacitor should be connected between VCCQ and VSS to decouple the
current surges from the power supply.
VSS
Supply
Ground: All VSS pins must be connected to the system ground.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Signal Descriptions
Table 1: Signal Descriptions (Continued)
Name
Type
RFU
—
Reserved for future use: Reserved by Micron for future device functionality and enhancement. Recommend that these be left floating. May be connected internally, but external connections will not affect operation.
DNU
—
Do not use: Do not connect to any other signal, or power supply; must be left floating.
NC
—
No connect: No internal connection; can be driven or floated.
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Description
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Memory Organization
Memory Organization
Memory Configuration
The main memory array is divided into 128KB or 64KW uniform blocks.
Memory Map
Table 2: Blocks[511:0]
Address Range
Block
Start
End
511
1FF 0000h
1FF FFFFh
⋮
⋮
⋮
255
0FF 0000h
0FF FFFFh
⋮
⋮
⋮
127
07F 0000h
07F FFFFh
⋮
⋮
⋮
63
03F 0000h
03F FFFFh
⋮
⋮
⋮
0
000 0000h
000 FFFFh
Note:
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1. 512Mb device = Blocks 0–511.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Bus Operations
Bus Operations
Table 3: Bus Operations
Notes 1 and 2 apply to entire table
Operation
CE#
OE#
WE#
RST#
VPP/WP#
A[MAX:0]
DQ[15:0]
READ
L
L
H
H
X
Address
Data output
WRITE
L
H
L
H
H3
Command address
Data input4
STANDBY
H
X
X
H
X
X
High-Z
OUTPUT
DISABLE
L
H
H
H
X
X
High-Z
RESET
X
X
X
L
X
X
High-Z
Notes:
1. Typical glitches of less than 3ns on CE#, OE#, and WE# are ignored by the device and do
not affect bus operations.
2. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.
3. If WP# is LOW, then the highest or the lowest block remains protected, depending on
line item.
4. Data input is required when issuing a command sequence or when performing data
polling or block protection.
Read
Bus READ operations read from the memory cells, registers, extended memory block, or
CFI space. To accelerate the READ operation, the memory array can be read in page
mode where data is internally read and stored in a page buffer.
Page size is 16 words and is addressed by address inputs A[3:0]. The extended memory
blocks and CFI area support page read mode.
A valid bus READ operation involves setting the desired address on the address inputs,
taking CE# and OE# LOW, and holding WE# HIGH. The data I/Os will output the value.
If CE# goes HIGH and returns LOW for a subsequent access, a random read access is
performed and tACC or tCE is required. (See AC Characteristics for details about when
the output becomes valid.)
Write
Bus WRITE operations write to the command interface. A valid bus WRITE operation
begins by setting the desired address on the address inputs. The address inputs are
latched by the command interface on the falling edge of CE# or WE#, whichever occurs
last. The data I/Os are latched by the command interface on the rising edge of CE# or
WE#, whichever occurs first. OE# must remain HIGH during the entire bus WRITE operation (See AC Characteristics for timing requirement details).
Standby
Driving CE# HIGH in read mode causes the device to enter standby and data I/Os to be
High-Z (See DC Characteristics).
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Bus Operations
During PROGRAM or ERASE operations, the device will continue to use the program/
erase supply current (ICC3) until the operation completes. The device cannot be placed
into standby mode during a PROGRAM/ERASE operation.
Output Disable
Data I/Os are High-Z when OE# is HIGH.
Reset
During reset mode the device is deselected and the outputs are High-Z. The device is in
reset mode when RST# is LOW. The power consumption is reduced to the standby level,
independently from CE#, OE#, or WE# inputs.
When RST# is HIGH, a time of tPHEL is required before a READ operation can access
the device, and a delay of tPHWL is required before a write sequence can be initiated.
After this wake-up interval, normal operation is restored, the device defaults to read array mode, and the data polling register is reset.
If RST# is driven LOW during a PROGRAM/ERASE operation or any other operation that
requires writing to the device, the operation will abort within tPLRH, and memory contents at the aborted block or address are no longer valid.
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Registers
Registers
The device features two methods for monitoring internal status during modify operations: data polling status and read status register. Users must not mix the two methods.
Only one method at a time must be used to monitor internal operations.
Data Polling Register
The device automatically enters data polling status mode upon command issuance.
The data polling status information uses the following to indicate information: DQ1,
DQ2, DQ3, DQ5, DQ6, and DQ7; DQ[15:8] are reserved and will output 00h.
Table 4: Data Polling Register Bit Definitions
Note 1 applies to entire table
Bit
Name
Settings
Description
Notes
DQ7
Data polling 0 or 1, depending on
bit
operations
Monitors whether the program/erase controller has successfully completed its operation, or has responded to an ERASE SUSPEND operation.
2, 4
DQ6
Toggle bit
Toggles: 0 to 1; 1 to 0;
and so on
Monitors whether the program, erase, or blank check controller has successfully completed its operations, or has responded
to an ERASE SUSPEND operation. During a PROGRAM/ERASE/
BLANK CHECK operation, DQ6 toggles from 0 to 1, 1 to 0, and
so on, with each successive READ operation from any address.
3, 4, 5
DQ5
Error bit
0 = Success
1 = Failure
Identifies errors detected by the program/erase controller. DQ5
is set to 1 when a PROGRAM, BLOCK ERASE, or CHIP ERASE operation fails to write the correct data to the memory, or when
a BLANK CHECK or CRC operation fails.
4, 6
DQ3
Erase timer
bit
0 = Erase not in progress
1 = Erase in progress
Identifies the start of program/erase controller operation during a BLOCK ERASE command. Before the program/erase controller starts, this bit set to 0.
4
DQ2
Alternative
toggle bit
Toggles: 0 to 1; 1 to 0;
and so on
During CHIP ERASE, BLOCK ERASE, and ERASE SUSPEND operations, DQ2 toggles from 0 to 1, 1 to 0, and so on, with each
successive READ operation from addresses within the blocks
being erased.
3, 4
DQ1
Buffered
program
abort bit
1 = Abort
Indicates a BUFFER PROGRAM, BLANK CHECK, or CRC operation abort. The BUFFERED PROGRAM ABORT and RESET command must be issued to return the device to read mode (see
WRITE TO BUFFER PROGRAM command).
Notes:
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1. The data polling register can be read during PROGRAM, ERASE, or ERASE SUSPEND operations; the READ operation outputs data on DQ[7:0].
2. For a PROGRAM operation in progress, DQ7 outputs the complement of the bit being
programmed. For a READ operation from the address previously programmed successfully, DQ7 outputs existing DQ7 data. For a READ operation from addresses with blocks
to be erased while an ERASE SUSPEND operation is in progress, DQ7 outputs 0; upon
successful completion of the ERASE SUSPEND operation, DQ7 outputs 1. For an ERASE
operation in progress, DQ7 outputs 0; upon ERASE operation's successful completion,
DQ7 outputs 1. During a BUFFER PROGRAM operation, the data polling bit is valid only
for the last word being programmed in the write buffer.
18
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Registers
3. After successful completion of a PROGRAM, ERASE, or BLANK CHECK operation, the device returns to read mode.
4. During erase suspend mode, READ operations to addresses within blocks not being
erased output memory array data as if in read mode. A protected block is treated the
same as a block not being erased. See the Toggle Flowchart for more information.
5. During erase suspend mode, DQ6 toggles when addressing a cell within a block being
erased. The toggling stops when the program/erase controller has suspended the ERASE
operation. See the Toggle Flowchart for more information.
6. When DQ5 is set to 1, a READ/RESET (F0h) command must be issued before any subsequent command.
Table 5: Operations and Corresponding Bit Settings
Note 1 applies to entire table
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
DQ1
RY/BY#
Notes
PROGRAM
Any address
DQ7#
Toggle
0
–
–
0
0
2
CRC range of
blocks
Any address
1
Toggle
0
–
–
0
0
CRC chip
Any address
DQ7#
Toggle
0
–
–
0
0
CHIP ERASE
Any address
0
Toggle
0
1
Toggle
–
0
Blank-checking
block
0
Toggle
0
1
Toggle
–
0
Non-blank-checking block
0
Toggle
0
1
No toggle
–
0
Erasing block
0
Toggle
0
1
Toggle
–
0
Non-erasing block
0
Toggle
0
1
No toggle
–
0
BLANK CHECK
BLOCK ERASE
PROGRAM
SUSPEND
Programming
block
Invalid operation
High-Z
Nonprogramming
block
Outputs memory array data as if in read mode
High-Z
Erasing block
ERASE
SUSPEND
Non-erasing block
PROGRAM during
ERASE SUSPEND
Erasing block
DQ7#
Toggle
0
–
Toggle
–
0
2
Non-erasing block
DQ7#
Toggle
0
–
No Toggle
–
0
2
BUFFERED
PROGRAM ABORT
Any address
DQ7#
Toggle
0
–
–
1
High-Z
PROGRAM Error
Any address
DQ7#
Toggle
1
–
–
–
High-Z
ERASE Error
Any address
0
Toggle
1
1
Toggle
–
High-Z
BLANK CHECK Error
Any address
0
Toggle
1
1
Toggle
–
High-Z
CRC range of
blocks error
Any address
1
Toggle
1
–
–
–
High-Z
CRC chip error
Any address
DQ7#
Toggle
1
–
–
–
High-Z
Notes:
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1
No Toggle
0
–
Toggle
–
4
Outputs memory array data as if in read mode
High-Z
High-Z
2
4
1. Unspecified data bits should be ignored.
2. DQ7# for buffer program is related to the last address location loaded.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Registers
3. DQ7# is the reverse DQ7 of the last word or byte loaded before CRC chip confirm command cycle.
Figure 6: Data Polling Flowchart
Start
Read DQ7, DQ5, and DQ1
at valid address1
Yes
DQ7 = Data
No
No
DQ1 = 13
No
DQ5 = 12
Yes
Yes
Read DQ7 at valid address
DQ7 = Data
Yes
No
Failure
Notes:
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Success
1. Valid address is the last address being programmed or an address within the block being
erased.
2. Failure results: DQ5 = 1 indicates an operation error. A READ/RESET (F0h) command must
be issued before any subsequent command.
3. Failure results: DQ1 = 1 indicates a WRITE TO BUFFER PROGRAM ABORT operation. A
full three-cycle RESET (AAh/55h/F0h) command sequence must be used to reset the aborted device.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Registers
Figure 7: Toggle Bit Flowchart
Start
Read DQ6 at valid address
Read DQ6, DQ5, and DQ1
at valid address
DQ6 = Toggle
Yes
No
DQ1 = 1
No
No
DQ5 = 1
Yes
Yes
Read DQ6 (twice) at valid address
DQ6 = Toggle
No
Yes
Failure1
Note:
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Success
1. Failure results: DQ5 = 1 indicates an operation error; DQ1 = 1 indicates a WRITE TO BUFFER PROGRAM ABORT operation.
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Registers
Figure 8: Data Polling/Toggle Bit Flowchart
Start
Read 1
DQ7 = Valid data
Yes
Read 2
Read 3
PROGRAM operation
Yes
Read 3 correct data?
Yes
No
No
No
DQ5 = 1
Yes
PROGRAM operation
failure
Read 2
No
DQ6 = Toggling
Yes
Read2.DQ6 = Read3.DQ6
Read 3
Device error
No
DQ6 = Toggling
Yes
Read1.DQ6 = Read2.DQ6
DQ2 = Toggling
Timeout failure
Read2.DQ2 = Read3.DQ2
No
Yes
No
DQ1 = 1
Erase/suspend mode
No
ERASE operation
complete
Device busy: Repolling
WRITE TO BUFFER
PROGRAM
Yes
Yes
PROGRAM operation
complete
WRITE TO BUFFER
PROGRAM
abort
No
Device busy: Repolling
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Registers
Read Status Register
The device’s status register displays PROGRAM, ERASE, and BLANK CHECK operations
status. A device’s status can be read after writing the READ STATUS REGISTER command (70h). When the READ STATUS REGISTER command is issued, the current status
is captured by the register and the device is in read status register mode. The first read
access in the status register mode exits the mode and returns to the output state when
the READ STATUS REGISTER command was issued. No other command should be sent
before reading the status register to exit the status register mode.
The status register bits are output on DQ[7:0], while DQ[15:8] outputs are 00h.
Table 6: Status Register Definitions
Bit
Name
Settings
Description
SR[15:8]
–
Reserved
Reserved for future use. Will always be set to 0.
SR7
Device program/
erase/blank check
status
0 = Busy
1 = Ready
Indicates erase, program, or blank check completion in the device. SR[6:1] are invalid; SR7 = 0.
SR6
Erase suspend status 0 = Erase in progress/ Indicates whether the device is erase suspended. After issuing an
complete
ERASE SUSPEND command, SR7 and SR6 are set to 1. SR6 remains
1 = Erase suspended set until the device receives an ERASE RESUME command.
SR5
Erase/blank check
status
SR4
Program status
SR3
SR2
SR1
SR0
0 = Erase/blank
check successful
1 = Erase/blank
check error
Set to 1 if an attempted erase or blank check failed.
0 = Program success
1 = Program error
Indicates whether the program failed or the buffer program has
aborted.
Writer buffer abort 0 = Program not
Indicates whether the buffer program has aborted.
status
aborted
1 = Program aborted
during buffer program
Program suspend
status
0 = Program in pro- Indicates whether the device is program suspended. After receivgress/complete
ing a PROGRAM SUSPEND command, SR7 and SR2 are set to 1,
1 = Program suspen- and remain set at 1 until a RESUME command is received.
ded
Device protect status 0 = Unlocked
Indicates whether program or erase was attempted on a locked
1 = Aborted erase/
block. If an ERASE or PROGRAM operation is attempted on a
program attempt on locked block, SR1 is set to 1 and the operation aborts.
a locked block
–
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Reserved
Reserved for future use. Will always be set to 0.
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Registers
Clear Status Register
The status register content can be cleared by CLEAR STATUS REGISTER command
(71h). The CLEAR STATUS REGISTER command clears the status register bits SR[6:1].
SR7 remains at 0, which indicates the device is busy.
However, for buffer program abort only, the CLEAR STATUS REGISTER command
would change also SR7 to 1, which reverts the device to main array read mode. The status register can also be cleared by using RESET Command (F0h).
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Registers
Lock Register
Table 7: Lock Register Bit Definitions
Note 1 applies to entire table
Bit
Name
Settings
Description
Notes
DQ[15:9]
–
Default value = 1
DQ[15:9] are reserved and are set to a default value of 1.
DQ8
–
Default value = 0
DQ8 is reserved and is set to a default value of 0.
–
Default value =1
DQ[7:3] are reserved and are set to a default value of 1.
DQ[7:3]
DQ2
Password pro- 0 = Password protectection mode tion mode enabled
lock bit
1 = Password protection mode disabled
(default)
Places the device permanently in password protection mode.
2
DQ1
Nonvolatile 0 = Nonvolatile proprotection tection mode enabled
mode lock bit with password protection mode permanently disabled
1 = Nonvolatile protection mode enabled
(default)
Places the device in nonvolatile protection mode, with password protection mode permanently disabled. When shipped
from the factory, the device will operate in nonvolatile protection mode, and the memory blocks are unprotected.
2
DQ0
Extended
0 = Protected
memory
1 = Unprotected (deblock protec- fault)
tion bit
If the device is shipped with the extended memory block unlocked, the block can be protected by setting this bit to 0. The
extended memory block protection status can be read in auto
select mode by issuing an AUTO SELECT command.
Notes:
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1. The lock register is a 16-bit, one-time programmable register. DQ[15:3] are reserved.
2. The password protection mode lock bit and nonvolatile protection mode lock bit cannot
both be programmed to 0. Any attempt to program one while the other is programmed
causes the operation to abort, and the device returns to read mode. The device is shipped from the factory with the default setting.
25
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Registers
Figure 9: Lock Register Program Flowchart
Start
Enter LOCK REGISTER command set
Address/data (unlock) cycle 1
Address/data (unlock) cycle 2
Address/data cycle 3
PROGRAM LOCK REGISTER
Address/data cycle 1
Address/data cycle 2
Polling algorithm
No
Done?
Yes
Read lock register
No
Match expected
value, 0?
Yes
Success: EXIT PROTECTION
command set
Address/data cycle 1
Address/data cycle 2
Notes:
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1. Each lock register bit can be programmed only once.
2. See the Block Protection Command Definitions table for address-data cycle details.
3. DQ5 and DQ1 are ignored in this algorithm flow.
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Standard Command Definitions – Address-Data Cycles
Standard Command Definitions – Address-Data Cycles
Table 8: Standard Command Definitions – Address-Data Cycles
Note 1 applies to entire table
Address and Data Cycles
Command and
Code/Subcode
1st
A
2nd
D
3rd
4th
A
D
A
D
2AA
55
X
F0
2AA
55
555
90
555
20
555
A0
A
5th
D
A
6th
D
A
D
Notes
READ and AUTO SELECT Operations
READ/RESET (F0h)
555
AA
READ CFI (98h)
555
98
EXIT READ CFI (F0h)
X
F0
AUTO SELECT (90h)
555
AA
X
F0
READ STATUS (70h)
555
70
CLEAR STATUS (71h)
555
71
555
AA
2AA
55
X
90
X
00
PROGRAM (A0h)
555
AA
2AA
55
UNLOCK BYPASS
PROGRAM (A0h)
X
A0
PA
PD
WRITE TO BUFFER
PROGRAM (25h)
555
AA
2AA
55
BAd
25
UNLOCK BYPASS
WRITE TO BUFFER
PROGRAM (25h)
BAd
25
BAd
N
PA
PD
WRITE TO BUFFER
PROGRAM CONFIRM
(29h)
BAd
29
BUFFERED PROGRAM
ABORT and RESET (F0h)
555
AA
PROGRAM SUSPEND
(B0h)
X
B0
PROGRAM RESUME (30h)
X
30
PROGRAM SUSPEND
(51h)
X
51
PROGRAM RESUME (50h)
X
50
CHIP ERASE (80/10h)
555
UNLOCK BYPASS
CHIP ERASE (80/10h)
X
EXIT AUTO SELECT (F0h)
2
Note 3 Note 3
4, 5
BYPASS Operations
UNLOCK BYPASS (20h)
UNLOCK BYPASS
RESET (90h/00h)
PROGRAM Operations
PA
PD
6
BAd
N
PA
PD
7, 8, 9
6
7
2AA
55
555
F0
AA
2AA
55
555
80
80
X
10
ERASE Operations
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555
AA
2AA
55
555
10
6
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Standard Command Definitions – Address-Data Cycles
Table 8: Standard Command Definitions – Address-Data Cycles (Continued)
Note 1 applies to entire table
Address and Data Cycles
1st
Command and
Code/Subcode
2nd
3rd
4th
5th
6th
A
D
A
D
A
D
A
D
A
D
A
D
BLOCK ERASE (80/30h)
555
AA
2AA
55
555
80
555
AA
2AA
55
BAd
30
UNLOCK BYPASS
BLOCK ERASE (80/30h)
X
80
BAd
30
ERASE SUSPEND (B0h)
X
B0
ERASE RESUME (30h)
X
30
555
33
Notes
6
BLANK CHECK Operations
BLANK CHECK
Notes:
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1. A = Address; D = Data; X = "Don't Care"; BAd = Any address in the block; N = Number of
words to be programmed; PA = Program address; PD = Program data; Gray shading =
Not applicable. All values in the table are hexadecimal. Some commands require both a
command code and subcode.
2. A full three-cycle RESET command sequence must be used to reset the device in the
event of a buffered program abort error (DQ1 = 1).
3. These cells represent READ cycles (versus WRITE cycles for the others).
4. AUTO SELECT enables the device to read the manufacturer code, device code, block protection status, and extended memory block protection indicator.
5. AUTO SELECT addresses and data are specified in the Electronic Signature table and the
Extended Memory Block Protection table.
6. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are
unnecessary.
7. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM
3rd and 4th cycles.
8. WRITE TO BUFFER PROGRAM operation: maximum cycles = 517. UNLOCK BYPASS WRITE
TO BUFFER PROGRAM operation: maximum cycles = 515. WRITE TO BUFFER PROGRAM
operation: N + 1 = words to be programmed; maximum buffer size = 512 words.
9. A[MAX:9] address pins should remain unchanged while A[8:0] pins are used to select a
word within the N+1 word page.
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READ and AUTO SELECT Operations
READ and AUTO SELECT Operations
READ/RESET Command
The READ/RESET (F0h) command returns the device to read mode and resets the errors
in the data polling register. One or three bus WRITE operations can be used to issue the
READ/RESET command. Note: A full three-cycle RESET command sequence must be
used to reset the device in the event of a buffered program abort error (DQ1 = 1).
Once a PROGRAM, ERASE, or SUSPEND operation begins, RESET commands are ignored until the operation is complete. Read/reset serves primarily to return the device to
read mode from a failed PROGRAM or ERASE operation. Read/reset may cause a return
to read mode from undefined states that might result from invalid command sequences. A hardware reset may be required to return to normal operation from some undefined states.
To exit the unlock bypass mode, the system must issue a two-cycle UNLOCK BYPASS
RESET command sequence. A READ/RESET command will not exit unlock bypass
mode.
READ CFI Command
The READ CFI (98h) command puts the device in read CFI mode and is only valid when
the device is in read array or auto select mode. One bus WRITE cycle is required to issue
the command.
Once in read CFI mode, bus READ operations will output data from the CFI memory
area (Refer to the Common Flash Interface for details).
Read CFI mode is exited by performing a READ/RESET command (F0h). The device returns to read mode unless it entered read CFI mode after an ERASE SUSPEND or PROGRAM SUSPEND command, in which case it returns to erase or program suspend
mode.
AUTO SELECT Command
At power-up or after a hardware reset, the device is in read mode. It can then be put in
auto select mode by issuing an AUTO SELECT (90h) command. Auto select mode enables the following device information to be read:
• Electronic signature, which includes manufacturer and device code information as
shown in the Electronic Signature table.
• Block protection, which includes the block protection status and extended memory
block protection indicator, as shown in the Block Protection table.
Electronic signature or block protection information is read by executing a READ operation with control signals and addresses set, as shown in the Read Electronic Signature
table or the Block Protection table, respectively. In addition, this device information can
be read or set by issuing an AUTO SELECT command.
Auto select mode can be used by the programming equipment to automatically match a
device with the application code to be programmed.
Three consecutive bus WRITE operations are required to issue an AUTO SELECT command. The device remains in auto select mode until a READ/RESET or READ CFI command is issued.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
READ and AUTO SELECT Operations
The device cannot enter auto select mode when a PROGRAM or ERASE operation is in
progress (RY/BY# LOW). However, auto select mode can be entered if the PROGRAM or
ERASE operation has been suspended by issuing a PROGRAM SUSPEND or ERASE SUSPEND command.
Auto select mode is exited by performing a READ/RESET command (F0h). The device
returns to read mode unless it entered auto select mode after an ERASE SUSPEND or
PROGRAM SUSPEND command, in which case it returns to erase or program suspend
mode.
Table 9: Block Protection
Note 1 applies to entire table
Address Input
READ Cycle
CE#
OE#
WE#
A[MAX:16]
A[15:2]
Data Input/Output
A1
A0
DQ[15:0]
128-bit (0x0~0x7) Factory-Programmable Extended Memory Protection Indicator (Bit DQ7)
Low lock
L
L
H
L
L
H
0009h2
H
0089h3
High lock
L
L
H
L
L
H
0019h2
H
0099h3
Block protection status
Protected
L
L
H
Unprotected
L
L
H
Notes:
Block base
address
L
H
L
0001h
L
H
L
0000h
1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.
2. Customer-lockable (default).
3. Micron prelocked.
Read Electronic Signature
Table 10: Read Electronic Signature – 512Mb
Note 1 applies to entire table
Data Input/
Output
Address Input
READ Cycle
CE#
OE#
WE#
A[MAX:4]
A3
A2
A1
A0
DQ[15:0]
Manufacturer code
L
L
H
L
L
L
L
L
0089h
Device code 1
L
L
H
L
L
L
L
H
227Eh
Device code 2
L
L
H
L
H
H
H
L
2223h
Device code 3
L
L
H
L
H
H
H
H
2201h
Note:
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1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Cyclic Redundancy Check Operation
Cyclic Redundancy Check Operation
CYCLIC REDUNDANCY CHECK Command
The CYCLIC REDUNDANCY CHECK (CRC) command is a nonsecure hash function designed to detect accidental changes to raw data. Typically, it is used in digital networks
and storage devices such as hard disk drives. A CRC-enabled device calculates a short,
fixed-length binary sequence known as the CRC code (or CRC). The device CRC operation will generate the CRC result of the whole device or of an address range specified by
the operation. Then the CRC result is compared with the expected CRC data provided in
the sequence. Finally, the device indicates a pass or fail through the data polling register. If the CRC fails, corrective action is possible, such as re-verifying with a normal
READ mode or rewriting the array data.
CRC is a higher performance alternative to reading data directly to verify recently programmed data, or as a way to periodically check the data integrity of a large block of
data against a stored CRC reference over the life of the product.
CRC helps improve test efficiency for programmer or burn-in stress tests. No system
hardware changes are required to enable CRC.
The CRC-64 operation follows the ECMA standard; the generating polynomial is:
G(x) = x64 + x62 + x57 + x55 + x54 + x53 + x52 + x47 + x46 + x45 + x40 + x39 + x38 + x37 + x35 + x33
+ x32+ x31 + x29 + x27 + x24 + x23 + x22 + x21 + x19 + x17 + x13 + x12 + x10 + x9 + x7 + x4 + x + 1
Note: The data stream sequence is from LSB to MSB and the default initial CRC value is
all zeros.
The CRC command sequences are shown in the tables below, for an entire die or for a
selected range, respectively.
Cyclic Redundancy Check Operation Command Sequence
Table 11: Command Sequence – Range of Blocks
Note 1 and 2 apply to entire table.
Address
DQ[15:0]
Description
Notes
0000555
00AAh
UI unlock cycle 1
00002AA
0055h
UI unlock cycle 2
0000000
00EBh
Extended function interface command
0000000
0027h
CRC sub-op code
0000000
000Ah
N-1 data count
0000000
FFFEh
CRC operation option data
0000001
Data
1st word of 64-bit expected CRC
0000002
Data
2nd word of 64-bit expected CRC
0000003
Data
3rd word of 64-bit expected CRC
0000004
Data
4th word of 64-bit expected CRC
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Cyclic Redundancy Check Operation
Table 11: Command Sequence – Range of Blocks (Continued)
Note 1 and 2 apply to entire table.
Address
DQ[15:0]
Description
Notes
0000005
DQ15 = A14
DQ14 = A13
...
DQ2 = A1
DQ1 = A0
DQ0 = set to zero
Byte address to start
3
0000006
A30-A15
Byte address to start
3
0000007
Reserved
0000008
DQ15 = A14
DQ14 = A13
...
DQ2 = A1
DQ1 = A0
DQ0 = set to zero
Byte address to stop
3
0000009
A30-A15
Byte address to stop
3
000000A
Reserved
0000000
0029h
Confirm command
0000000
Read
Continue data polling to wait for device to be ready
Notes:
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Default as 0000h
Default as 0000h
1. If the CRC check fails, a check error is generated by setting DQ5 = 1.
2. This is a byte-aligned operation.
3. The stop address must be bigger than the start address; otherwise, the algorithm will
take no action.
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Cyclic Redundancy Check Operation
Table 12: Command Sequence – Entire Chip
Address
DQ[15:0]
0000555
00AAh
UI unlock cycle 1
00002AA
0055h
UI unlock cycle 2
0000000
00EBh
Extended function interface command
0000000
0027h
CRC sub-op code
0000000
0004h
N-1 data count
0000000
FFFFh
CRC operation option data
0000001
Data
1st word of 64-bit expected CRC
0000002
Data
2nd word of 64-bit expected CRC
0000003
Data
3rd word of 64-bit expected CRC
0000004
Data
4th word of 64-bit expected CRC
0000000
0029h
Confirm command
0000000
Read
Continue data polling to wait for device to be ready
Note:
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Description
1. Applies to entire table: If the CRC check fails, a check error is generated by setting DQ5
= 1.
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Bypass Operations
Bypass Operations
UNLOCK BYPASS Command
The UNLOCK BYPASS (20h) command is used to place the device in unlock bypass
mode. Three bus WRITE operations are required to issue the UNLOCK BYPASS command.
When the device enters unlock bypass mode, the two initial UNLOCK cycles required
for a standard PROGRAM or ERASE operation are not needed, thus enabling faster total
program or erase time.
The UNLOCK BYPASS command is used in conjunction with UNLOCK BYPASS PROGRAM or UNLOCK BYPASS ERASE commands to program or erase the device faster
than with standard PROGRAM or ERASE commands. Using these commands can save
considerable time when the cycle time to the device is long. When in unlock bypass
mode, only the following commands are valid:
• The UNLOCK BYPASS PROGRAM command can be issued to program addresses
within the device.
• The UNLOCK BYPASS BLOCK ERASE command can then be issued to erase one or
more memory blocks.
• The UNLOCK BYPASS CHIP ERASE command can be issued to erase the whole memory array.
• The UNLOCK BYPASS WRITE TO BUFFER PROGRAM and UNLOCK BYPASS ENHANCED WRITE TO BUFFER PROGRAM commands can be issued to speed up the
programming operation.
• The UNLOCK BYPASS RESET command can be issued to return the device to read
mode.
In unlock bypass mode, the device can be read as if in read mode.
In addition to the UNLOCK BYPASS command, when V PP/WP# is raised to V HH, the device automatically enters unlock bypass mode. When V PP/WP# returns to V IH or V IL, the
device is no longer in unlock bypass mode, and normal operation resumes. The transitions from V IH to V HH and from V HH to V IH must be slower than tVHVPP. (See the Accelerated Program, Data Polling/Toggle AC Characteristics.)
Note: Micron recommends entering and exiting unlock bypass mode using the ENTER
UNLOCK BYPASS and UNLOCK BYPASS RESET commands rather than raising V PP/WP#
to V HH. V PP/WP# should never be raised to V PPH from any mode except read mode; otherwise, the device may be left in an indeterminate state. V PP/WP# should not remain at
VHH for than 80 hours cumulative.
UNLOCK BYPASS RESET Command
The UNLOCK BYPASS RESET (90/00h) command is used to return to read/reset mode
from unlock bypass mode. Two bus WRITE operations are required to issue the UNLOCK BYPASS RESET command. The READ/RESET command does not exit from unlock bypass mode.
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Program Operations
Program Operations
PROGRAM Command
The PROGRAM (A0h) command can be used to program a value to one address in the
memory array. The command requires four bus WRITE operations, and the final WRITE
operation latches the address and data in the internal state machine and starts the program/erase controller. After programming has started, bus READ operations output the
data polling register content.
Programming can be suspended and then resumed by issuing a PROGRAM SUSPEND
command and a PROGRAM RESUME command, respectively.
If the address falls in a protected block, the PROGRAM command is ignored, and the
data remains unchanged. The data polling register is not read, and no error condition is
given.
After the PROGRAM operation has completed, the device returns to read mode, unless
an error has occurred. When an error occurs, bus READ operations to the device continue to output the data polling register. A READ/RESET command must be issued to reset
the error condition and return the device to read mode.
The PROGRAM command cannot change a bit set to 0 back to 1, and an attempt to do
so is masked during a PROGRAM operation. Instead, an ERASE command must be used
to set all bits in one memory block or in the entire memory from 0 to 1.
The PROGRAM operation is aborted by performing a hardware reset or by powering
down the device. In this case, data integrity cannot be ensured, and it is recommended
that the words or bytes that were aborted be reprogrammed.
UNLOCK BYPASS PROGRAM Command
When the device is in unlock bypass mode, the UNLOCK BYPASS PROGRAM (A0h)
command can be used to program one address in the memory array. The command requires two bus WRITE operations instead of four required by a standard PROGRAM
command; the final WRITE operation latches the address and data and starts the program/erase controller (The standard PROGRAM command requires four bus WRITE operations). The PROGRAM operation using the UNLOCK BYPASS PROGRAM command
behaves identically to the PROGRAM operation using the PROGRAM command. The
operation cannot be aborted. A bus READ operation to the memory outputs the data
polling register.
WRITE TO BUFFER PROGRAM Command
The WRITE TO BUFFER PROGRAM (25h) command makes use of the program buffer to
speed up programming and dramatically reduces system programming time compared
to the standard non-buffered PROGRAM command. This product supports a 512-word
maximum program buffer.
When issuing a WRITE TO BUFFER PROGRAM command, V PP/WP# can be held HIGH
or raised to V HH. Also, it can be held LOW if the block is not the lowest or highest block,
depending on the part number.
The following successive steps are required to issue the WRITE TO BUFFER PROGRAM
command:
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Program Operations
First, two UNLOCK cycles are issued. Next, a third bus WRITE cycle sets up the WRITE
TO BUFFER PROGRAM command. The set-up code can be addressed to any location
within the targeted block. Then, a fourth bus WRITE cycle sets up the number of words
to be programmed. Value n is written to the same block address, where n + 1 is the
number of words to be programmed. Value n + 1 must not exceed the size of the program buffer, or the operation will abort. A fifth cycle loads the first address and data to
be programmed. Last, n bus WRITE cycles load the address and data for each word into
the program buffer. Addresses must lie within the range from the start address +1 to the
start address + (n - 1).
Optimum programming performance and lower power usage are achieved by aligning
the starting address at the beginning of a 512-word boundary (A[8:0] = 0x000h). Any
buffer size smaller than 512 words is allowed within a 512-word boundary, while all addresses used in the operation must lie within the 512-word boundary. In addition, any
crossing boundary buffer program will result in a program abort.
To program the content of the program buffer, this command must be followed by a
WRITE TO BUFFER PROGRAM CONFIRM command.
If an address is written several times during a WRITE TO BUFFER PROGRAM operation,
the address/data counter will be decremented at each data load operation, and the data
will be programmed to the last word loaded into the buffer.
Invalid address combinations or the incorrect sequence of bus WRITE cycles will abort
the WRITE TO BUFFER PROGRAM command.
The data polling register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device
status during a WRITE TO BUFFER PROGRAM operation.
The WRITE TO BUFFER PROGRAM command should not be used to change a bit set to
0 back to 1, and an attempt to do so is masked during the operation. Rather than the
WRITE TO BUFFER PROGRAM command, the ERASE command should be used to set
memory bits from 0 to 1.
Figure 10: Boundary Condition of Program Buffer Size
0000h
512 Words
Any buffer program attempt
is not allowed
0200h
512 Words
511 words or less are allowed
in the program buffer
512-word program
buffer is allowed
512-word program
buffer is allowed
0400h
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Program Operations
Figure 11: WRITE TO BUFFER PROGRAM Flowchart
Start
WRITE TO BUFFER
command,
block address
WRITE TO BUFFER
confirm, block address
Write n,1
block address
Perform polling
algorithm
First three cycles of the
WRITE TO BUFFER
PROGRAM command
Write buffer data,
start address
Polling
status = done?
No
X=n
No
X=0
Yes
Error?
Yes
Yes
No
Abort
WRITE TO BUFFER
Yes
Buffer program
abort?
Write to a different
block address
No
Yes
No
Write next data,2
program address pair
Failure: Issue BUFFERED
PROGRAM ABORT AND
RESET command
Failure: Issue RESET
command to return to
read array mode
Success: Return to
read array mode
X=X-1
Notes:
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1. n + 1 is the number of addresses to be programmed.
2. The BUFFERED PROGRAM ABORT AND RESET command (3 cycles reset) must be issued to
return the device to read mode.
3. When the block address is specified, any address in the selected block address space is
acceptable. However, when loading program buffer address with data, all addresses
must fall within the selected program buffer page.
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Program Operations
UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command
When the device is in unlock bypass mode, the UNLOCK BYPASS WRITE TO BUFFER
(25h) command can be used to program the device in fast program mode. The command requires two bus WRITE operations fewer than the standard WRITE TO BUFFER
PROGRAM command.
The UNLOCK BYPASS WRITE TO BUFFER PROGRAM command behaves the same way
as the WRITE TO BUFFER PROGRAM command: the operation cannot be aborted, and
a bus READ operation to the memory outputs the data polling register.
The WRITE TO BUFFER PROGRAM CONFIRM command is used to confirm an UNLOCK BYPASS WRITE TO BUFFER PROGRAM command and to program the n + 1
words loaded in the program buffer by this command.
WRITE TO BUFFER PROGRAM CONFIRM Command
The WRITE TO BUFFER PROGRAM CONFIRM (29h) command is used to confirm a
WRITE TO BUFFER PROGRAM command and to program the n + 1 words loaded in the
program buffer by this command.
BUFFERED PROGRAM ABORT AND RESET Command
A BUFFERED PROGRAM ABORT AND RESET (F0h) command must be issued to reset
the device to read mode when the BUFFER PROGRAM operation is aborted. The buffer
programming sequence can be aborted in the following ways:
• Load a value that is greater than the page buffer size during the number of locations
to program in the WRITE TO BUFFER PROGRAM command.
• Write to an address in a different block than the one specified during the WRITE BUFFER LOAD command.
• Write an address/data pair to a different write buffer page than the one selected by
the starting address during the program buffer data loading stage of the operation.
• Write data other than the CONFIRM command after the specified number of data
load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DQ7# (for the last address location
loaded), DQ6 = toggle, and DQ5 = 0 (all of which are data polling register bits). A BUFFERED PROGRAM ABORT and RESET command sequence must be written to reset the
device for the next operation.
Note: The full three-cycle BUFFERED PROGRAM ABORT and RESET command sequence is required when using buffer programming features in unlock bypass mode.
PROGRAM SUSPEND Command
The PROGRAM SUSPEND command can be used to interrupt a program operation so
that data can be read from another block. When the PROGRAM SUSPEND command is
issued during a program operation, the device suspends the operation within the program suspend latency time and updates the data polling register bits.
After the PROGRAM operation has been suspended, data can be read from any address.
However, data is invalid when read from an address where a program operation has
been suspended.
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ACCELERATED BUFFERED PROGRAM Operations
The PROGRAM SUSPEND command may also be issued during a PROGRAM operation
while an erase is suspended. In this case, data may be read from any address not in
erase suspend or program suspend mode. To read from the extended memory block
area (one-time programmable area), the ENTER/EXIT EXTENDED MEMORY BLOCK
command sequences must be issued.
The system may also issue the AUTO SELECT command sequence when the device is in
program suspend mode. The system can read as many auto select codes as required.
When the device exits auto select mode, the device reverts to program suspend mode
and is ready for another valid operation.
The PROGRAM SUSPEND operation is aborted by performing a device reset or powerdown. In this case, data integrity cannot be ensured, and it is recommended that the
words that were aborted be reprogrammed. This device has two different command codes for program suspend, B0h and 51h. Code B0h is available for legacy compatibility.
Code 51h is recommended for use.
PROGRAM RESUME Command
The PROGRAM RESUME command must be issued to exit a program suspend mode
and resume a PROGRAM operation. The controller can use DQ7 or DQ6 data polling
bits to determine the status of the PROGRAM operation. After a PROGRAM RESUME
command is issued, subsequent PROGRAM RESUME commands are ignored. Another
PROGRAM SUSPEND command can be issued after the device has resumed programming. This device has two different command codes for Program Resume (30h or 50h).
Code 30h is available for legacy compatibility. Code 50h is recommended to use.
ACCELERATED BUFFERED PROGRAM Operations
ACCELERATED BUFFER PROGRAM operations provides faster performance than
standard program command sequences. Operations are enabled through V PP/WP# under the V HH voltage supply.
When the system asserts V HH on input, the device automatically enters the UNLOCK
BYPASS mode, which enables the system to use the UNLOCK BYPASS WRITE TO BUFFER PROGRAM (25h) command sequence.
Removing V HH from the V PP upon completion of the embedded program operation returns the device to normal operation.
Table 13: ACCELERATED PROGRAM Requirements and Recommendations
Device State
Requirements/Recommendations
Device blocks
Requirement: Must be unprotected prior to raising VPP/WP# to VHH
VHH applied to VPP/WP#
Requirement: Maximum cumulative period of 80 hours.
VPP/WP#
Requirement: Must not be at VHH for operations except ACCELERATED BUFFERED PROGRAM and CHIP ERASE; otherwise device can be damaged
Recommendation: Keep stable to VHH during ACCELERATED BUFFERED PROGRAM operation
Power-up
Recommendation: Apply VHH on VPP/WP# after VCC/VCCQ is stable on.
Power-down
Recommendation: Adjust VPP/WP# from VHH to VIH/VIL before VCC/VCCQ goes LOW.
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Erase Operations
Erase Operations
CHIP ERASE Command
The CHIP ERASE (80/10h) command erases the entire chip. Six bus WRITE operations
are required to issue the command and start the program/erase controller.
Protected blocks are not erased. If all blocks are protected, the data remains unchanged.
No error is reported when protected blocks are not erased.
During the CHIP ERASE operation, the device ignores all other commands, including
ERASE SUSPEND. It is not possible to abort the operation. All bus READ operations during CHIP ERASE output the data polling register on the data I/Os. See the Data Polling
Register section for more details.
After the CHIP ERASE operation completes, the device returns to read mode, unless an
error has occurred. If an error occurs, the device will continue to output the data polling
register.
When the operation fails, a READ/RESET command must be issued to reset the error
condition and return to read mode. The status of the array must be confirmed through
the BLANK CHECK operation and the BLOCK ERASE command re-issued to the failed
block.
The CHIP ERASE command sets all of the bits in unprotected blocks of the device to 1.
All previous data is lost.
The operation is aborted by performing a reset or by powering down the device. In this
case, data integrity cannot be ensured, and it is recommended that the entire chip be
erased again.
UNLOCK BYPASS CHIP ERASE Command
When the device is in unlock bypass mode, the UNLOCK BYPASS CHIP ERASE (80/10h)
command can be used to erase all memory blocks at one time. The command requires
only two bus WRITE operations instead of six using the standard CHIP ERASE command. The final bus WRITE operation starts the program/erase controller.
The UNLOCK BYPASS CHIP ERASE command behaves the same way as the CHIP
ERASE command: the operation cannot be aborted, and a bus READ operation to the
memory outputs the data polling register.
BLOCK ERASE Command
The BLOCK ERASE (80/30h) command erase one block. It sets all bits in the unprotected selected block to 1. All previous data in the selected block are lost. Six bus WRITE
operations are required to select the block to be erased.
After the sixth bus WRITE operation, a bus READ operation outputs the data polling
register. See the WE#-Controlled Program waveforms for details on how to identify if the
program/erase controller has started the BLOCK ERASE operation.
After the BLOCK ERASE operation completes, the device returns to read mode, unless
an error has occurred. If an error occurs, bus READ operations will continue to output
the data polling register. A READ/RESET command must be issued to reset the error
condition and return to read mode.
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Erase Operations
If the selected block is protected, it is ignored and the data remains unchanged. No error condition is given when protected block is not erased.
During the BLOCK ERASE operation, the device ignores all commands except the
ERASE SUSPEND command and the READ STATUS command. The operation is aborted by performing a hardware reset or powering down the device. In this case, data integrity cannot be ensured, and it is recommended that the aborted blocks be erased
again.
UNLOCK BYPASS BLOCK ERASE Command
When the device is in unlock bypass mode, the UNLOCK BYPASS BLOCK ERASE
(80/30h) command can be used to erase one memory block. The command requires
two bus WRITE operations instead of six using the standard BLOCK ERASE command.
The final bus WRITE operation latches the address of the block and starts the program/
erase controller.
The UNLOCK BYPASS BLOCK ERASE command behaves the same way as the BLOCK
ERASE command: the operation cannot be aborted, and a bus READ operation to the
memory outputs the data polling register. See the BLOCK ERASE Command section for
details.
ERASE SUSPEND Command
The ERASE SUSPEND (B0h) command temporarily suspends a BLOCK ERASE operation. One bus WRITE operation is required to issue the command. The block address is
"Don't Care."
The program/erase controller suspends the ERASE operation within the erase suspend
latency time of the ERASE SUSPEND command being issued. However, when the
ERASE SUSPEND command is written during the block erase timeout, the device immediately terminates the timeout period and suspends the ERASE operation. After the
program/erase controller has stopped, the device operates in read mode, and the erase
is suspended.
During an ERASE SUSPEND operation, it is possible to execute these operations in arrays that are not suspended:
•
•
•
•
•
•
•
•
READ (main memory array)
PROGRAM
WRITE TO BUFFER PROGRAM
AUTO SELECT
READ CFI
UNLOCK BYPASS
Extended memory block commands
READ/RESET
Reading from a suspended block will output the data polling register. If an attempt is
made to program in a protected or suspended block, the PROGRAM command is ignored and the data remains unchanged; also, the data polling register is not read and no
error condition is given.
Before the RESUME command is initiated, the READ/RESET command must to issued
to exit AUTO SELECT and READ CFI operations. In addition, the EXIT UNLOCK BYPASS
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ACCELERATED CHIP ERASE Operations
and EXIT EXTENDED MEMORY BLOCK commands must be issued to exit unlock bypass and the extended memory block modes.
An ERASE SUSPEND command is ignored if it is written during a CHIP ERASE operation.
If the ERASE SUSPEND operation is aborted by performing a device hardware reset or
power-down, data integrity cannot be ensured, and it is recommended that the suspended blocks be erased again.
ERASE RESUME Command
The ERASE RESUME (30h) command restarts the program/erase controller after an
ERASE SUSPEND operation.
The device must be in read array mode before the RESUME command will be accepted.
An erase can be suspended and resumed more than once.
ACCELERATED CHIP ERASE Operations
The ACCELERATED CHIP ERASE operation provides faster performance than the
standard CHIP ERASE command sequence. Operations are enabled through V PP/WP#
under the V HH voltage supply.
When the system asserts V HH on input, the device automatically enters the UNLOCK
BYPASS mode, which enables the system to use the UNLOCK BYPASS CHIP ERASE
(80/30h) command sequence.
When a block is protected, the CHIP ERASE command skips the protected block and
continues with next block erase. The command algorithm skips a block that failed to
erase and continues with the remaining blocks. The fail flag will be set for the operation.
Removing V HH from the V PP/WP# upon completion of the embedded erase operation
returns the device to normal operation. When an error occurs or when the operation
fails, the array status should be confirmed through the BLANK CHECK operation and
the BLOCK ERASE command re-issued to the failed block.
Table 14: ACCELERATED CHIP ERASE Requirements and Recommendations
Device Component/State
Requirements/Recommendations
VPP/WP#
Requirement: Must not be at VHH for operations except ACCELERATED PROGRAM and
CHIP ERASE; otherwise device can be damaged.
VHH applied to VPP/WP#
Requirement: Maximum cumulative period of 80 hours.
Power-up
Recommendation: Apply VHH on VPP/WP# after VCC/VCCQ is stable on.
Power-down
Recommendation: Adjust VPP/WP# from VHH to VIH/VIL before VCC/VCCQ goes LOW.
BLANK CHECK Operation
The BLANK CHECK operation determines whether a specified block is blank (that is,
completely erased). It can also be used to determine whether a previous ERASE operation was successful, including ERASE operations that might have been interrupted by
power loss.
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BLANK CHECK Operation
The BLANK CHECK operation checks for cells that are programmed or over-erased. If it
finds any, it returns a failure status, indicating that the block is not blank. If it returns a
passing status, the block is guaranteed blank (all 1s) and is ready to program.
Before executing, the ERASE operation initiates an embedded BLANK CHECK operation, and if the target block is blank, the ERASE operation is skipped, benefitting overall
cycle performance; otherwise, the ERASE operation continues.
The BLANK CHECK operation can occur in only one block at a time, and during its execution, reading the data polling register is the only other operation allowed. Reading
from any address in the device enables reading the data polling register to monitor
blank check progress or errors. Operations such as READ (array data), PROGRAM,
ERASE, and any suspended operation are not allowed.
After the BLANK CHECK operation has completed, the device returns to read mode unless an error has occurred. When an error occurs, the device continues to output data
polling register data. A READ/RESET command must be issued to reset the error condition and return the device to read mode.
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Device Protection
Device Protection
Hardware Protection
The V PP/WP# function provides a hardware method of protecting either the highest or
lowest block. When V PP/WP# is LOW, PROGRAM and ERASE operations on either of
these block options is ignored to provide protection. When V PP/WP# is HIGH, the device reverts to the previous protection status for the highest or lowest block. PROGRAM
and ERASE operations can modify the data in either of these block options unless block
protection is enabled.
Note: Micron highly recommends driving V PP/WP# HIGH or LOW. If a system needs to
float the V PP/WP# pin, without a pull-up/pull-down resistor and no capacitor, then an
internal pull-up resistor is enabled.
Table 15: VPP/WP# Functions
VPP/WP# Settings
Function
VIL
Highest or lowest block is protected.
VIH
Highest or lowest block is unprotected unless software protection is activated.
Software Protection
The following software protection modes are available:
• Volatile protection
• Nonvolatile protection
• Password protection
The device is shipped with all blocks unprotected. On first use, the device defaults to
the nonvolatile protection mode but can be activated in either the nonvolatile protection or password protection mode.
The desired protection mode is activated by setting either the nonvolatile protection
mode lock bit or the password protection mode lock bit of the lock register (see the Lock
Register section). Both bits are one-time-programmable and nonvolatile; therefore, after the protection mode has been activated, it cannot be changed, and the device is set
permanently to operate in the selected protection mode. It is recommended that the
desired software protection mode be activated when first programming the device.
For the highest or lowest block, a higher level of block protection can be achieved by
locking the block using nonvolatile protection mode and holding V PP /WP# LOW.
Blocks with volatile protection and nonvolatile protection can coexist within the memory array. If the user attempts to program or erase a protected block, the device ignores
the command and returns to read mode.
The block protection status can be read by performing a read electronic signature or by
issuing an AUTO SELECT command (see the Block Protection table).
Refer to the Block Protection Status table and the Software Protection Scheme figure for
details on the block protection scheme. Refer to the Protection Operations section for a
description of the command sets.
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Device Protection
Volatile Protection Mode
Volatile protection enables the software application to protect blocks against inadvertent change and can be disabled when changes are needed. Volatile protection bits are
unique for each block and can be individually modified. Volatile protection bits control
the protection scheme only for unprotected blocks whose nonvolatile protection bits
are cleared to 1. Issuing a PROGRAM VOLATILE PROTECTION BIT or CLEAR VOLATILE
PROTECTION BIT command sets to 0 or clears to 1 the volatile protection bits and places the associated blocks in the protected (0) or unprotected (1) state, respectively. The
volatile protection bit can be set or cleared as often as needed.
When the device is first shipped, or after a power-up or hardware reset, the volatile protection bits default to 1 (unprotected).
Nonvolatile Protection Mode
A nonvolatile protection bit is assigned to each block. Each of these bits can be set for
protection individually by issuing a PROGRAM NONVOLATILE PROTECTION BIT command. Also, each device has one global volatile bit called the nonvolatile protection bit
lock bit; it can be set to protect all nonvolatile protection bits at once. This global bit
must be set to 0 only after all nonvolatile protection bits are configured to the desired
settings. When set to 0, the nonvolatile protection bit lock bit prevents changes to the
state of the nonvolatile protection bits. When cleared to 1, the nonvolatile protection
bits can be set and cleared using the PROGRAM NONVOLATILE PROTECTION BIT and
CLEAR ALL NONVOLATILE PROTECTION BITS commands, respectively.
No software command unlocks the nonvolatile protection bit lock bit unless the device
is in password protection mode; in nonvolatile protection mode, the nonvolatile protection bit lock bit can be cleared only by taking the device through a hardware reset or
power-up.
Nonvolatile protection bits cannot be cleared individually; they must be cleared all at
once using a CLEAR ALL NONVOLATILE PROTECTION BITS command. They will remain set through a hardware reset or a power-down/power-up sequence.
If one of the nonvolatile protection bits needs to be cleared (unprotected), additional
steps are required: First, the nonvolatile protection bit lock bit must be cleared to 1, using either a power-cycle or hardware reset. Then, the nonvolatile protection bits can be
changed to reflect the desired settings. Finally, the nonvolatile protection bit lock bit
must be set to 0 to lock the nonvolatile protection bits. The device now will operate normally.
To achieve the best protection, the PROGRAM NONVOLATILE PROTECTION LOCK BIT
command should be executed early in the boot code, and the boot code should be protected by holding V PP/WP# LOW.
Nonvolatile protection bits and volatile protection bits have the same function when
VPP/WP# is HIGH or when V PP/WP# is at the voltage for program acceleration (VHH ).
Password Protection Mode
The password protection mode provides a higher level of security than the nonvolatile
protection mode by requiring a 64-bit password to unlock the nonvolatile protection bit
lock bit. In addition to this password requirement, the nonvolatile protection bit lock
bit is set to 0 after power-up and reset to maintain the device in password protection
mode.
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Device Protection
Executing the UNLOCK PASSWORD command by entering the correct password clears
the nonvolatile protection bit lock bit, enabling the block nonvolatile protection bits to
be modified. If the password provided is incorrect, the nonvolatile protection bit lock
bit remains locked, and the state of the nonvolatile protection bits cannot be modified.
To place the device in password protection mode, the following two steps are required:
First, before activating the password protection mode, a 64-bit password must be set
and the setting verified. Password verification is allowed only before the password protection mode is activated. Next, password protection mode is activated by programming the password protection mode lock bit to 0. This operation is irreversible. After the
bit is programmed, it cannot be erased, the device remains permanently in password
protection mode, and the 64-bit password can be neither retrieved nor reprogrammed.
In addition, all commands to the address where the password is stored are disabled.
Note: There is no means to verify the password after password protection mode is enabled. If the password is lost after enabling the password protection mode, there is no
way to clear the nonvolatile protection bit lock bit.
Figure 12: Software Protection Scheme
Volatile protection bit
1 = unprotected
0 = protected
(Default setting depends on the product order option)
Volatile
protection
Nonvolatile protection bit
1 = unprotected (default)
0 = protected
Nonvolatile
protection
Nonvolatile protection bit lock bit (volatile)
Array block
1 = unlocked (default, after power-up or hardware reset)
0 = locked
Nonvolatile protection
mode
Notes:
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Password protection
mode
1. Volatile protection bits are programmed and cleared individually. Nonvolatile protection
bits are programmed individually and cleared collectively.
2. Once programmed to 0, the nonvolatile protection bit lock bit can be reset to 1 only by
taking the device through a power-up or hardware reset.
46
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Device Protection
Table 16: Block Protection Status
Nonvolatile
Protection Bit
Lock Bit1
Nonvolatile
Protection
Bit2
Volatile
Protection
Bit3
Block
Protection
Status4
1
1
1
00h
Block unprotected; nonvolatile protection bit changeable.
1
1
0
01h
Block protected by volatile protection bit; nonvolatile protection bit changeable.
1
0
1
01h
Block protected by nonvolatile protection bit; nonvolatile
protection bit changeable.
1
0
0
01h
Block protected by nonvolatile protection bit and volatile
protection bit; nonvolatile protection bit changeable.
0
1
1
00h
Block unprotected; nonvolatile protection bit unchangeable.
0
1
0
01h
Block protected by volatile protection bit; nonvolatile protection bit unchangeable.
0
0
1
01h
Block protected by nonvolatile protection bit; nonvolatile
protection bit unchangeable.
0
0
0
01h
Block protected by nonvolatile protection bit and volatile
protection bit; nonvolatile protection bit unchangeable.
Notes:
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Block Protection Status
1. Nonvolatile protection bit lock bit: when cleared to 1, all nonvolatile protection bits are
unlocked; when set to 0, all nonvolatile protection bits are locked.
2. Block nonvolatile protection bit: when cleared to 1, the block is unprotected; when set
to 0, the block is protected.
3. Block volatile protection bit: when cleared to 1, the block is unprotected; when set to 0,
the block is protected.
4. Block protection status is checked under AUTO SELECT mode.
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Block Protection Command Definitions – Address-Data Cycles
Block Protection Command Definitions – Address-Data Cycles
Table 17: Block Protection Command Definitions – Address-Data Cycles
Notes 1 and 2 apply to entire table
Address and Data Cycles
Command and
Code/Subcode
1st
A
2nd
3rd
4th
D
A
D
A
D
555
AA
2AA
55
555
40
PROGRAM LOCK
REGISTER (A0h)
X
A0
X
Data
READ LOCK REGISTER
X
Data
EXIT LOCK REGISTER
(90h/00h)
X
90
A
nth
D
…
A
D
Notes
LOCK REGISTER Commands
ENTER LOCK
REGISTER
COMMAND SET (40h)
3
5
4, 5, 6
X
00
3
PASSWORD PROTECTION Commands
ENTER PASSWORD
PROTECTION
COMMAND SET (60h)
555
AA
2AA
55
555
60
3
PROGRAM
PASSWORD (A0h)
X
A0
PWAn
PWDn
READ PASSWORD
00
PWD0
01
PWD1
02
PWD2
03
PWD3
UNLOCK PASSWORD
(25h/03h)
00
25
00
03
00
PWD0
01
PWD1
EXIT PASSWORD
PROTECTION (90h/00h)
X
90
X
00
7
4, 6, 8
…
00
29
8
3
NONVOLATILE PROTECTION Commands
ENTER NONVOLATILE
PROTECTION
COMMAND SET (C0h)
555
AA
2AA
55
PROGRAM
NONVOLATILE
PROTECTION BIT (A0h)
X
A0
BAd
00
BAd
READ
(DQ0)
CLEAR ALL
NONVOLATILE
PROTECTION
BITS (80h/30h)
X
80
00
30
10
EXIT NONVOLATILE
PROTECTION (90h/00h)
X
90
X
00
3
READ NONVOLATILE
PROTECTION BIT
STATUS
555
C0
3
9
4, 6, 9
NONVOLATILE PROTECTION BIT LOCK BIT Commands
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Block Protection Command Definitions – Address-Data Cycles
Table 17: Block Protection Command Definitions – Address-Data Cycles (Continued)
Notes 1 and 2 apply to entire table
Address and Data Cycles
1st
Command and
Code/Subcode
2nd
3rd
4th
A
D
A
D
A
D
555
AA
2AA
55
555
50
PROGRAM
NONVOLATILE
PROTECTION BIT
LOCK BIT (A0h)
X
A0
X
00
READ NONVOLATILE
PROTECTION BIT
LOCK BIT STATUS
X
READ
(DQ0)
EXIT NONVOLATILE
PROTECTION BIT
LOCK BIT (90h/00h)
X
90
X
00
ENTER NONVOLATILE
PROTECTION BIT
LOCK BIT
COMMAND SET (50h)
A
nth
D
…
A
D
Notes
3
9
4, 6, 9
3
VOLATILE PROTECTION Commands
ENTER VOLATILE
PROTECTION
COMMAND SET (E0h)
555
AA
2AA
55
PROGRAM VOLATILE
PROTECTION BIT (A0h)
X
A0
BAd
00
BAd
READ
(DQ0)
CLEAR VOLATILE
PROTECTION BIT (A0h)
X
A0
BAd
01
9
EXIT VOLATILE
PROTECTION (90h/00h)
X
90
X
00
3
READ VOLATILE
PROTECTION BIT
STATUS
555
E0
3
9
4, 6
EXTENDED MEMORY BLOCK Operations
ENTER EXTENDED
MEMORY BLOCK (88h)
555
AA
2AA
55
555
88
PROGRAM EXTENDED
MEMORY BLOCK (A0h)
555
AA
2AA
55
555
A0
Word
address
data
READ EXTENDED
MEMORY BLOCK
Word
address
data
EXIT EXTENDED
MEMORY BLOCK
(90h/00h)
555
AA
2AA
55
555
90
X
00
Notes:
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1. Key: A = Address and D = Data; X = "Don’t Care;" BAd = Any address in the block; PWDn
= Password words, n = 0 to 3; PWAn = Password address, n = 0 to 3; Gray = Not applicable. All values in the table are hexadecimal.
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Block Protection Command Definitions – Address-Data Cycles
2. DQ[15:8] are "Don’t Care" during UNLOCK and COMMAND cycles. A[MAX:16] are
"Don’t Care" during UNLOCK and COMMAND cycles, unless an address is required.
3. The ENTER command sequence must be issued prior to any operation. It disables READ
and WRITE operations from and to block 0. READ and WRITE operations from and to
any other block are allowed. Also, when an ENTER COMMAND SET command is issued,
an EXIT COMMAND SET command must be issued to return the device to READ mode.
4. READ REGISTER/PASSWORD commands have no command code; CE# and OE# are driven
LOW and data is read according to a specified address.
5. Data = Lock register content.
6. All address cycles shown for this command are READ cycles.
7. Only one portion of the password can be programmed or read by each PROGRAM PASSWORD command.
8. Each portion of the password can be entered or read in any order as long as the entire
64-bit password is entered or read.
9. Both nonvolatile and volatile protection bit settings are as follows: Protected state = 00;
Unprotected state = 01.
10. The CLEAR ALL NONVOLATILE PROTECTION BITS command programs all nonvolatile protection bits before erasure. This prevents over-erasure of previously cleared nonvolatile
protection bits.
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Protection Operations
Protection Operations
Blocks can be protected individually against accidental PROGRAM or ERASE operations. The block protection scheme is shown in the Software Protection Scheme figure.
Memory block and extended memory block protection is configured through the lock
register.
LOCK REGISTER Commands
After the ENTER LOCK REGISTER COMMAND SET (40h) command has been issued, all
bus READ or PROGRAM operations can be issued to the lock register.
The PROGRAM LOCK REGISTER (A0h) command allows the lock register to be configured. The programmed data can then be checked with a READ LOCK REGISTER command by driving CE# and OE# LOW with the appropriate address data on the address
bus.
PASSWORD PROTECTION Commands
After the ENTER PASSWORD PROTECTION COMMAND SET (60h) command has been
issued, the commands related to password protection mode can be issued to the device.
The PROGRAM PASSWORD (A0h) command is used to program the 64-bit password
used in the password protection mode. To program the 64-bit password, the complete
command sequence must be entered four times at four consecutive addresses selected
by A[1:0]. By default, all password bits are set to 1. The password can be checked by issuing a READ PASSWORD command.
Note: A password must be programmed per Flash memory die to enable password protection.
The READ PASSWORD command is used to verify the password used in password protection mode. To verify the 64-bit password, the complete command sequence must be
entered four times at four consecutive addresses selected by A[1:0]. If the password
mode lock bit is programmed and the user attempts to read the password, the device
will output 00h onto the I/O data bus.
The UNLOCK PASSWORD (25/03h) command is used to clear the nonvolatile protection bit lock bit, allowing the nonvolatile protection bits to be modified. The UNLOCK
PASSWORD command must be issued, along with the correct password, and requires a
6μs delay between successive UNLOCK PASSWORD commands in order to prevent
hackers from cracking the password by trying all possible 64-bit combinations. If this
delay does not occur, the latest command will be ignored. Approximately 6μs is required for unlocking the device after the valid 64-bit password has been provided.
NONVOLATILE PROTECTION Commands
After the ENTER NONVOLATILE PROTECTION COMMAND SET (C0h) command has
been issued, the commands related to nonvolatile protection mode can be issued to the
device.
A block can be protected from program or erase by issuing a PROGRAM NONVOLATILE
PROTECTION BIT (A0h) command, along with the block address. This command sets
the nonvolatile protection bit to 0 for a given block.
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Protection Operations
The status of a nonvolatile protection bit for a given block or group of blocks can be
read by issuing a READ NONVOLATILE MODIFY PROTECTION BIT command, along
with the block address.
The nonvolatile protection bits are erased simultaneously by issuing a CLEAR ALL
NONVOLATILE PROTECTION BITS (80/30h) command. No specific block address is required. If the nonvolatile protection bit lock bit is set to 0, the command fails.
Figure 13: Set/Clear Nonvolatile Protection Bit Algorithm Flowchart
Start
ENTER NONVOLATILE
PROTECTION
command set
PROGRAM/CLEAR
NONVOLATILE
PROTECTION BIT
Polling algorithm
No
Done?
Yes
READ NONVOLATILE
PROTECTION
BIT STATUS
Match
expected value?
DQ0 = 1 (clear)
or 0 (set)
No
Yes
Success
EXIT PROTECTION
command set
Notes:
1. See the Block Protection Command Definitions table for address-data cycle details.
2. DQ5 and DQ1 are ignored in this algorithm flow.
NONVOLATILE PROTECTION BIT LOCK BIT Commands
After the ENTER NONVOLATILE PROTECTION BIT LOCK BIT COMMAND SET (50h)
command has been issued, the commands that allow the nonvolatile protection bit lock
bit to be set can be issued to the device.
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Protection Operations
The PROGRAM NONVOLATILE PROTECTION BIT LOCK BIT (A0h) command is used to
set the nonvolatile protection bit lock bit to 0, thus locking the nonvolatile protection
bits and preventing them from being modified.
The READ NONVOLATILE PROTECTION BIT LOCK BIT STATUS command is used to
read the status of the nonvolatile protection bit lock bit.
VOLATILE PROTECTION Commands
After the ENTER VOLATILE PROTECTION COMMAND SET (E0h) command has been
issued, commands related to the volatile protection mode can be issued to the device.
The PROGRAM VOLATILE PROTECTION BIT (A0h) command individually sets a volatile protection bit to 0 for a given block. If the nonvolatile protection bit for the same
block is set, the block is locked regardless of the value of the volatile protection bit (see
the Block Protection Status table).
The status of a volatile protection bit for a given block can be read by issuing a READ
VOLATILE PROTECTION BIT STATUS command along with the block address.
The CLEAR VOLATILE PROTECTION BIT (A0h) command individually clears (sets to 1)
the volatile protection bit for a given block. If the nonvolatile protection bit for the same
block is set, the block is locked regardless of the value of the volatile protection bit (see
the Block Protection Status table).
EXTENDED MEMORY BLOCK Commands
The device has one extra 512-word extended memory block that can be accessed only
by the ENTER EXTENDED MEMORY BLOCK (88h) command. It is used as a security
block to provide a permanent 128-bit secure ID number or to store additional information. The device can be shipped with the extended memory block prelocked permanently by Micron, including the 128-bit security identification number. Or, the device
can be shipped with the extended memory block unlocked, enabling customers to permanently program and lock it (default) (see Lock Register, the AUTO SELECT command, and the Block Protection table.)
Table 18: Extended Memory Block Address and Data
Data
Address
Micron Prelocked
Customer Lockable
000000h–
000007h
Secure ID number
Determined by customer (default)
000008h–
0001FFh
Protected and
unavailable
After the ENTER EXTENDED MEMORY BLOCK command has been issued, the device
enters the extended memory block mode. All bus READ or PROGRAM operations are
conducted on the extended memory block, and the extended memory block is addressed using the addresses occupied by block 0 in the other operating modes (see the
Memory Map table).
In extended memory block mode, ERASE, CHIP ERASE, ERASE SUSPEND, and ERASE
RESUME commands are not allowed. The extended memory block cannot be erased,
and each bit of the extended memory block can only be programmed once.
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Protection Operations
The extended memory block is protected from further modification by programming
lock register bit 0. Once invoked, this protection cannot be undone.
The device remains in extended memory block mode until the EXIT EXTENDED MEMORY BLOCK (90/00h) command is issued, which returns the device to read mode, or
until power is removed from the device. After a power-up sequence or hardware reset,
the device will revert to reading memory blocks in the main array.
EXIT PROTECTION Command
The EXIT PROTECTION COMMAND SET (90/00h) command is used to exit the lock
register, password protection, nonvolatile protection, volatile protection, and nonvolatile protection bit lock bit command set modes and return the device to read mode.
Note that the READ/RESET command (F0h) is ignored under these modes.
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Common Flash Interface
Common Flash Interface
The common Flash interface (CFI) is a JEDEC-approved, standardized data structure
that can be read from the Flash memory device. It allows a system's software to query
the device to determine various electrical and timing parameters, density information,
and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary.
When the READ CFI command is issued, the device enters CFI query mode and the data
structure is read from memory. The following tables show the addresses (A[7:0]) used to
retrieve the data. The query data is always presented on the lowest order data outputs
(DQ[7:0]), and the other data outputs (DQ[15:8]) are set to 0.
Table 19: Query Structure Overview
Note 1 applies to the entire table
Address Subsection Name
Description
10h
CFI query identification string
Command set ID and algorithm data offset
1Bh
System interface information
Device timing and voltage information
27h
Device geometry definition
Flash device layout
40h
Primary algorithm-specific extended query table
Additional information specific to the primary algorithm (optional)
Note:
1. Query data are always presented on the lowest order data outputs (DQ[7:0]). DQ[15:8]
are set to 0.
Table 20: CFI Query Identification String
Note 1 applies to the entire table
Address
Data
Description
Value
10h
0051h
11h
0052h
Query unique ASCII string "QRY"
"R"
12h
0059h
"Y"
13h
14h
0002h
0000h
Primary algorithm command set and control interface ID code 16-bit ID code defining a specific algorithm
–
15h
16h
0040h
0000h
Address for primary algorithm extended query table (see the Primary AlgorithmSpecific Extended Query Table)
P = 40h
17h
18h
0000h
0000h
Alternate vendor command set and control interface ID code second vendor-specified algorithm supported
–
19h
1Ah
0000h
0000h
Address for alternate algorithm extended query table
–
Note:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
"Q"
1. Query data are always presented on the lowest order data outputs (DQ[7:0]). DQ[15:8]
are set to 0.
55
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Common Flash Interface
Table 21: CFI Query System Interface Information
Note 1 applies to the entire table
Address
Data
Description
Value
1Bh
0027h
VCC logic supply minimum program/erase voltage
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
2.7V
1Ch
0036h
VCC logic supply maximum program/erase voltage
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
3.6V
1Dh
0085h
VHH (programming) supply minimum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
8.5V
1Eh
0095h
VHH (programming) supply maximum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 10mV
9.5V
1Fh
0005h
Typical timeout for single byte/word program = 2nμs
32µs
20h
0009h
Typical timeout for maximum size buffer program =
21h
0008h
Typical timeout per individual block erase =
22h
0011h
Typical timeout for full chip erase = 2nms
23h
24h
0003h
0002h
2nms
256ms
2n
2n
times typical
times typical
2n
25h
0003h
Maximum timeout per individual block erase =
26h
0003h
Maximum timeout for chip erase = 2n times typical
Note:
512µs
131s
Maximum timeout for byte/word program =
Maximum timeout for buffer program =
2nμs
times typical
256µs
2048µs
2s
1048s
1. The values in this table are valid for all packages.
Table 22: Device Geometry Definition
Address
Data
Description
Value
2n
27h
001Ah
Device size =
28h
29h
0001h
0000h
Flash device interface code description
2Ah
2Bh
000Ah
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Ch
0001h
Number of erase block regions. It specifies the number of regions
containing contiguous erase blocks of the same size.
2Dh
2Eh
00FFh
0001h
Erase block region 1 information
Number of identical-size erase blocks = 01FFh + 1
2Fh
30h
0000h
0002h
Erase block region 1 information
Block size in region 1 = 0200h × 256 bytes
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase block region 2 information
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
in number of bytes
56
64MB
x16
asynchronous
1024
1
512
128KB
0
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Common Flash Interface
Table 22: Device Geometry Definition (Continued)
Address
Data
Description
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase block region 3 information
Value
0
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase block region 4 information
0
3Dh
3Eh
3Fh
FFFFh
FFFFh
FFFFh
Reserved
–
Table 23: Primary Algorithm-Specific Extended Query Table
Note 1 applies to the entire table
Address
Data
Description
Value
40h
0050h
41h
0052h
42h
0049h
43h
0031h
Major version number, ASCII
"1"
44h
0035h
Minor version number, ASCII
"5"
45h
001Ch
Address sensitive unlock (bits[1:0]):
00 = Required
01 = Not required
Process technology (bits [7:2])
0111b: Second generation
46h
0002h
Erase suspend:
00 = Not supported
01 = Read only
02 = Read and write
2
47h
0001h
Block protection:
00 = Not supported
x = Number of blocks per group
1
48h
0000h
Temporary block unprotect scheme:
00 = Not supported
01 = Supported
49h
0008h
Protect/unprotect scheme:
08 = Advanced sector protection method
8
4Ah
0000h
Simultaneous operations:
Not supported
–
4Bh
0000h
Burst mode:
00 = Not supported
01 = Supported
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
Primary algorithm extended query table unique ASCII string “PRI”
"P"
"R"
"I"
Required
Not supported
Not supported
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Common Flash Interface
Table 23: Primary Algorithm-Specific Extended Query Table (Continued)
Note 1 applies to the entire table
Address
Data
Description
Value
4Ch
0003h
Page mode:
00 = Not supported
01 = 4-word page
02 = 8-word page
03 = 16-word page
4Dh
0085h
VHH supply minimum program/erase voltage:
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
8.5V
4Eh
0095h
VHH supply maximum program/erase voltage:
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
9.5V
4Fh
00xxh
WP# protection:
xx = 04h: Uniform device, HW protection for lowest block
xx = 05h: Uniform device, HW protection for highest block
50h
0001h
Program suspend:
00 = Not supported
01 = Supported
Supported
51h
0001h
Unlock bypass:
00 = Not supported
01 = Supported
Supported
52h
000Ah
Extended memory block (customer OTP area): 2n bytes
1024 bytes
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
16-word page
58
Uniform + VPP/WP#
protecting highest
or lowest block
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Common Flash Interface
Table 23: Primary Algorithm-Specific Extended Query Table (Continued)
Note 1 applies to the entire table
Address
Data
Description
53h
008Fh
Value
Software Features
–
bit 0: Status register polling
00 = Not supported
01 = Supported)
bit 1: DQ polling
00 = Not supported
01 = Supported)
bit 2: Program suspend/resume commands
00 = Not supported
01 = Supported)
bit 3: Word programming
00 = Not supported
01 = Supported)
bit 4: Bit-field programming
00 = Not supported
01 = Supported)
bit 5: Autodetect programming
00 = Not supported
01 = Supported)
bit 6: RFU
bit 7: Multiple writes per line
00 = Not supported
01 = Supported)
54h
0005h
Page size: 2n bytes
32 bytes
2n
55h
0005h
Erase suspend timeout maximum:
56h
0004h
Program suspend timeout maximum: 2n (µs)
57h to 77h
FFFFh
Reserved
0005h
tPLRH
0009h
tVCCPH
78h
79h
32µs
16µs
–
2n
maximum:
Power-on reset
Note:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
maximum:
(µs)
(µs)
2n
32µs
(µs)
512µs
1. The values in this table are valid for both packages.
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Power-Up and Reset Characteristics
Power-Up and Reset Characteristics
Table 24: Power-Up Specifications
Note 1 applies to entire table.
Symbol
Parameter
Legacy
JEDEC
Min
Unit
Notes
–
tVCHVCQH
0
µs
2
VCC HIGH to rising edge of RST#
tVCS
tVCHPH
300
µs
3, 4
VCCQ HIGH to rising edge of RST#
tVIOS
tVCQHPH
0
µs
3, 4
tRH
tPHEL
50
ns
–
tPHWL
150
ns
VCC HIGH to VCCQ HIGH
RST# HIGH to chip enable LOW
RST# HIGH to write enable LOW
Notes:
1. Sampled only; not 100% tested.
2. VCC should attain VCC,min from VSS simultaneously with or prior to applying VCCQ during
power up. VCC should attain VSS during power down.
3. If RST# is not stable for tVCS or tVIOS, the device will not allow any READ or WRITE operations, and a hardware reset is required.
4. Power supply transitions should only occur when RST# is LOW.
Figure 14: Power-Up Timing
tVCHVCQH
VCC
VSS
VCCQ
VSSQ
tRH
CE#
tVIOS
RST#
tVCS
WE#
tPHWL
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mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
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Power-Up and Reset Characteristics
Table 25: Reset AC Specifications
Symbol
Condition/Parameter
Legacy
JEDEC
Min
Max
Unit
Notes
RST# LOW to read mode during program or
erase
tREADY
tPLRH
–
25
µs
1
RST# pulse width
tRP
tPLPH
100
–
ns
RST# HIGH to CE# LOW, OE# LOW
tRH
tPHEL, tPHGL
50
–
ns
tRPD
–
0
–
µs
0
–
µs
0
–
ns
RST# LOW to standby mode during read mode
RST# LOW to standby mode during program or
erase
tRB
RY/BY# HIGH to CE# LOW, OE# LOW
Note:
tRHEL, tRHGL
1
1
1. Sampled only; not 100% tested.
Figure 15: Reset AC Timing – No PROGRAM/ERASE Operation in Progress
RY/BY#
CE#, OE#
tRH
RST#
tRP
Figure 16: Reset AC Timing During PROGRAM/ERASE Operation
tREADY
RY/BY#
tRB
CE#, OE#
tRH
RST#
tRP
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mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
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Absolute Ratings and Operating Conditions
Absolute Ratings and Operating Conditions
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 26: Absolute Maximum/Minimum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature under bias
TBIAS
–50
125
°C
Storage temperature
TSTG
–65
150
°C
Supply voltage
VCC
–0.6
VCC + 2
V
1, 2
Input/output supply voltage
VCCQ
–0.6
VCCQ + 2
V
1, 2
VPP
–0.6
9.5
V
3
Program/erase voltage
Notes:
Notes
1. During signal transitions, minimum voltage may undershoot to −2V for periods less than
20ns.
2. During signal transitions, maximum voltage may overshoot to VCC + 2V for periods less
than 20ns.
3. VPP must not remain at 9.5V for more than 80 hours cumulative.
Table 27: Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply voltage
VCC
2.7
3.6
V
Input/output supply voltage (VCCQ ≤ VCC)
VCCQ
1.65
3.6
V
Accelerated buffered program/chip erase voltage
VHH
8.5
9.5
V
Ambient operating temperature
TA
–40
Load capacitance
CL
Input rise and fall times (VIL to VIH)
–
Input pulse voltages
–
Input and output timing reference voltages
–
Address to address skew
–
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
105
30
0.3
°C
pF
2.5
0 to VCCQ
ns
1, 2
V
VCCQ/2
–
Notes
V
3
ns
1. If the rise/fall time is slower than 2.5ns, all timing specs must be derated by 0.5ns for every nanosecond push-out in rise/fall time. (Example: for a 10ns rise/fall time, all timing
specs must be derated by (10 - 2.5) × (0.5ns) = 3.75ns.
2. Applies to Address, CE#, OE#, and WE# signals.
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Absolute Ratings and Operating Conditions
Figure 17: AC Measurement Load Circuit
VCCQ
VCC
25kΩ
Device
under
test
CL
25kΩ
0.1µF
Note:
1. CL includes jig capacitance.
Figure 18: AC Measurement I/O Waveform
VCCQ
VCCQ/2
0V
Table 28: Input/Output Capacitance
Parameter
Input capacitance
Output capacitance
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
Symbol
Test Condition
Min
Max
Unit
CIN
VIN = 0V
3
11
pF
COUT
VOUT = 0V
3
7
pF
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DC Characteristics
DC Characteristics
Table 29: DC Current Characteristics
Parameter
Input load current
Symbol
Conditions
Min
Typ
Max
Unit
Notes
ILI
0V ≤ VIN ≤ VCC
–
–
±1
µA
1
Output leakage current
ILO
0V ≤ VOUT ≤ VCC
–
–
±1
µA
VCC read
current
ICC1
CE# = VIL, OE# = VIH,
f = 5 MHz
–
26
31
mA
CE# = VIL, OE# = VIH,
f = 13 MHz
–
12
16
mA
ICC2
CE# = VCCQ ±0.2V,
RST# = VCCQ ±0.2V
–
70
200
µA
ICC APS
VCC = VCC,max,
VCCQ = VCCQ,max
CE# = VSSQ,
RST# = VCCQ,
All inputs are at VCCQ
or VSS
–
–
2
mA
VPP/WP# = VIL
or VIH
–
35
50
mA
VPP/WP# = VHH
–
35
50
mA
–
2
15
µA
–
0.2
5
µA
Random read
Page read
VCC standby
current
VCC automatic
power saving (APS)
current
VCC program/erase/blank
check current
VPP current
ICC3
Read
IPP1
Standby
IPP2
PROGRAM operation
ongoing
IPP3
ERASE operation
ongoing
IPP4
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
Program/
erase
controller
active
VPP/WP# ≤ VCC
VPP/WP# = VHH
–
5
10
mA
VPP/WP# = VCC
–
0.05
0.10
mA
VPP/WP# = VHH
–
5
10
mA
VPP/WP# = VCC
–
0.05
0.10
mA
2
1. The maximum input load current is ±5µA on the VPP/WP# pin.
2. Sampled only; not 100% tested.
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DC Characteristics
Table 30: DC Voltage Characteristics
Parameter
Input LOW voltage
Symbol
Conditions
Min
Typ
Max
Unit
VIL
VCC ≥ 2.7V
–0.5
–
0.8
V
Notes
Input HIGH voltage
VIH
VCC ≥ 2.7V
0.7VCCQ
–
VCCQ + 0.4
V
Output LOW voltage
VOL
IOL = 100µA,
VCC = VCC,min,
VCCQ = VCCQ,min
–
–
0.15VCCQ
V
Output HIGH voltage
VOH
IOH = 100µA,
VCC = VCC,min,
VCCQ = VCCQ,min
0.85VCCQ
–
–
V
Voltage for VPP/WP# program
acceleration
VPP
–
8.5
–
9.5
V
1
Program/erase lockout supply
voltage
VLKO
–
2.0
–
–
V
2, 3
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. VPP must not remain at 9.5V for more than 80 hours cumulative.
2. Sampled only; not 100% tested.
3. WRITE operations are not valid when VCC supply drops below VLKO.
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Read AC Characteristics
Read AC Characteristics
Table 31: Read AC Characteristics – VCC = VCCQ = 2.7–3.6V
Symbol
Parameter
Legacy
JEDEC
Condition
Min
Max
Unit
tRC
tAVAV
CE# = VIL,
OE# = VIL
105
–
ns
tACC
tAVQV
CE# = VIL,
OE# = VIL
–
105
ns
tPAGE
tAVQV1
CE# = VIL,
OE# = VIL
–
20
ns
CE# LOW to output valid
tCE
tELQV
OE# = VIL
–
105
ns
OE# LOW to output valid
tOE
tGLQV
CE# = VIL
–
25
ns
CE# HIGH to output High-Z
tHZ
tEHQZ
OE# = VIL
–
20
ns
1
OE# HIGH to output High-Z
tDF
tGHQZ
CE# = VIL
–
15
ns
1
CE# HIGH, OE# HIGH, or address transition to output transition
tOH
tEHQX,
–
0
–
ns
Address valid to next address valid
Address valid to output valid
Address valid to output valid (page)
Notes
tGHQX,
tAXQX
Note:
1. Sampled only; not 100% tested.
Table 32: Read AC Characteristics – VCCQ = 1.65V–VCC
Symbol
Parameter
Address valid to next address valid
Address valid to output valid
Address valid to output valid (page)
Legacy
JEDEC
Condition
Min
Max
Unit
tRC
tAVAV
CE# = VIL,
OE# = VIL
110
–
ns
tACC
tAVQV
CE# = VIL,
OE# = VIL
–
110
ns
tPAGE
tAVQV1
CE# = VIL,
OE# = VIL
–
25
ns
Notes
CE# LOW to output valid
tCE
tELQV
OE# = VIL
–
110
ns
OE# LOW to output valid
tOE
tGLQV
CE# = VIL
–
25
ns
CE# HIGH to output High-Z
tHZ
tEHQZ
OE# = VIL
–
20
ns
1
OE# HIGH to output High-Z
tDF
tGHQZ
CE# = VIL
–
15
ns
1
CE# HIGH, OE# HIGH, or address transition to output transition
tOH
tEHQX,
–
0
–
ns
tGHQX,
tAXQX
Note:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. Sampled only; not 100% tested.
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Read AC Characteristics
Figure 19: Random Read AC Timing
tRC
A[MAX:0]
Valid
tACC
tOH
CE#
tCE
tOH
tLZ
tHZ
OE#
tOLZ
tOH
tOE
tDF
DQ[15:0]
Valid
Figure 20: Page Read AC Timing
A[MAX:4]
A[3:0]
Valid
Valid
Valid
Valid
Valid
Valid
Valid
Valid
tACC
CE#
tCE
tOH
tHZ
OE#
tOE
tPAGE
tOH
tDF
DQ[15:0]
Valid
Note:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
Valid
Valid
Valid
Valid
Valid
Valid
1. Page size is 16 words and is addressed by address inputs A[3:0].
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Write AC Characteristics
Write AC Characteristics
Table 33: WE#-Controlled Write AC Characteristics
Symbol
Parameter
Legacy
JEDEC
Min
tWC
–
60
–
–
ns
CE# LOW to WE# LOW
tCS
tELWL
0
–
–
ns
WE# LOW to WE# HIGH
tWP
tWLWH
35
–
–
ns
Input valid to WE# HIGH
tDS
tDVWH
30
–
–
ns
WE# HIGH to input transition
tDH
tWHDX
0
–
–
ns
WE# HIGH to CE# HIGH
tCH
tWHEH
0
–
–
ns
WE# HIGH to WE# LOW
tWPH
tWHWL
20
–
–
ns
Address valid to WE# LOW
tAS
tAVWL
0
–
–
ns
WE# LOW to address transition
tAH
tWLAX
45
–
–
ns
OE# HIGH to WE# LOW
–
tGHWL
0
–
–
ns
WE# HIGH to OE# LOW
tOEH
tWHGL
0
–
–
ns
Program/erase valid to RY/BY# LOW
tBUSY
tWHRL
–
–
90
ns
–
tWHQV
tAVQV
–
–
ns
–
–
ns
WRITE cyle time
WE# HIGH to OE# valid
Typ
Max
Unit
Notes
1
2
+ 30
VHH rise or fall time on VPP/WP#
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
tVHVPP
–
250
1. The user's write timing must comply with this specification. Any violation of this write
timing specification may result in permanent damage to the NOR Flash device.
2. Sampled only; not 100% tested.
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Write AC Characteristics
Figure 21: WE#-Controlled Program AC Timing
3rd Cycle
4th Cycle
Data Polling
tWC
READ Cycle
tWC
A[MAX:0]
555h
PA
tAS
PA
tAH
tCH
tCS
tCE
CE#
tGHWL
tOE
OE#
tWP
tWPH
WE#
tWHWH1
tDS
DQ[15:0]
A0h
PD
DQ7#
tDF
DOUT
tOH
DOUT
tDH
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. Only the third and fourth cycles of the PROGRAM command are represented. The PROGRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (DOUT) programmed by the previous PROGRAM
command.
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
5. For tWHWH1 timing details, see the Program/Erase Characteristics table.
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Write AC Characteristics
Table 34: CE#-Controlled Write AC Characteristics
Symbol
Parameter
Legacy
JEDEC
Min
WRITE cycle time
tWC
–
60
–
–
ns
WE# LOW to CE# LOW
tWS
tWLEL
0
–
–
ns
CE# LOW to CE# HIGH
tCP
tELEH
35
–
–
ns
Input valid to CE# HIGH
tDS
tDVEH
30
–
–
ns
CE# HIGH to input transition
tDH
tEHDX
0
–
–
ns
CE# HIGH to WE# HIGH
tWH
tEHWH
0
–
–
ns
CE# HIGH to CE# LOW
tCPH
tEHEL
20
–
–
ns
Address valid to CE# LOW
tAS
tAVEL
0
–
–
ns
CE# LOW to address transition
tAH
tELAX
45
–
–
ns
OE# HIGH to CE# LOW
–
tGHEL
0
–
–
ns
VHH rise or fall time on VPP/WP#
–
tVHVPP
250
–
–
ns
tBUSY
tWHRL
–
–
90
ns
–
tWHQV
–
–
ns
Program/erase valid to RY/BY# LOW
WE# HIGH to OE# valid
tAVQV
Typ
+
Max
Unit
Notes
1
2
30
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. The user's write timing must comply with this specification. Any violation of this write
timing specification may result in permanent damage to the NOR Flash device.
2. Sampled only; not 100% tested.
70
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Write AC Characteristics
Figure 22: CE#-Controlled Program AC Timing
3rd Cycle
4th Cycle
Data Polling
555h
PA
PA
tWC
A[MAX:0]
tAS
tAH
tWH
tWS
WE#
tGHEL
OE#
tCP
tCPH
CE#
tWHWH1
tDS
DQ[15:0]
A0h
PD
DQ7#
DOUT
tDH
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. Only the third and fourth cycles of the PROGRAM command are represented. The PROGRAM command is followed by checking of the status register data polling bit.
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
5. For tWHWH1 timing details, see the Program/Erase Characteristics table.
71
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Write AC Characteristics
Figure 23: Chip/Block Erase AC Timing
tWC
A[MAX:0]
555h
2AAh
555h
555h
tAS
555h
BAh1
2AAh
tAH
tCH
tCS
CE#
tGHWL
OE#
tWP
tWPH
WE#
tDS
DQ[15:0]
AAh
55h
80h
AAh
55h
10h/
30h
tDH
Notes:
1. For a CHIP ERASE command, the address is 555h, and the data is 10h; for a BLOCK ERASE
command, the address is BAd, and the data is 30h.
2. BAd is the block address.
3. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
4. For tWHWH1 timing details, see the Program/Erase Characteristics table.
Figure 24: Accelerated Program AC Timing
VPP/WP#
VHH
VIL or VIH
tVHVPP
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
72
tVHVPP
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Data Polling/Toggle AC Characteristics
Data Polling/Toggle AC Characteristics
Table 35: Data Polling/Toggle AC Characteristics
Note 1 applies to entire table
Symbol
Parameter
Legacy
JEDEC
Min
Max
Unit
Address setup time to CE# or OE# LOW
tASO
tAXGL
15
–
ns
Address hold time from OE# or CE# HIGH
tAHT
tGHAX, tEHAX
0
–
ns
CE# HIGH time
tEPH
tEHEL2
20
–
ns
OE# HIGH time
tOPH
tGHGL2
20
–
ns
WE# HIGH to OE# LOW (toggle and data polling)
tOEH
tWHGL2
10
–
ns
Note:
1. Sampled only; not 100% tested.
Figure 25: Data Polling AC Timing
tCH
tCE
tHZ/tDF
CE#
tOE
tOPH
OE#
tOEH
WE#
DQ7
Data
DQ7#
DQ7#
Valid DQ7
Data
DQ[6:0]
Data
Output flag
Output flag
Valid
DQ[6:0] Data
tBUSY
RY/BY#
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. DQ7 returns a valid data bit when the PROGRAM or ERASE command has completed.
2. See the following tables for timing details: Read AC Characteristics and Data Polling/
Toggle AC Characteristics.
73
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Data Polling/Toggle AC Characteristics
Figure 26: Toggle/Alternative Toggle Bit Polling AC Timing
A[MAX:0]
tAHT
tASO
CE#
tOEH
tAHT
tASO
WE#
tOPH
tEPH
tOPH
OE#
tDH
DQ6/DQ2
tOE
Data
Toggle
tCE
Toggle
Toggle
Stop
toggling
Output
Valid
tBUSY
RY/BY#
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. DQ6 stops toggling when the PROGRAM or ERASE command has completed. DQ2 stops
toggling when the CHIP ERASE or BLOCK ERASE command has completed.
2. See the following tables for timing details: Read AC Characteristics and Data Polling/
Toggle AC Characteristics.
74
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Program/Erase Characteristics
Program/Erase Characteristics
Table 36: Program/Erase Characteristics
Notes 1 and 2 apply to entire table
Buffer
Size
Byte
Word
Min
Typ
Max
Unit
Notes
Block erase (128KB)
–
–
–
–
2
1100
ms
–
Chip erase
–
–
–
–
104
–
s
–
Erase suspend latency time
–
–
–
–
–
20
µs
–
Erase or erase resume to suspend
–
–
–
–
100
–
µs
3, 4
Accelerated chip erase
–
–
–
–
95
–
s
–
–
–
–
–
25
200
µs
–
32
–
32
–
92
460
µs
–
64
–
64
–
117
600
µs
–
128
–
128
–
171
900
µs
–
256
–
256
–
285
1500
µs
–
512
–
512
–
512
2000
µs
–
32
–
1
–
2.88
14.38
µs
–
64
–
1
–
1.83
9.38
µs
–
128
–
1
–
1.34
7.03
µs
–
256
–
1
–
1.11
5.86
µs
–
512
–
1
–
1.0
3.90
µs
–
Accelerated full buffer program time
–
–
–
–
410
–
µs
–
Program suspend latency time
–
–
–
–
–
15
µs
–
Set nonvolatile protection bit time
–
–
–
–
25
320
µs
–
Clear nonvolatile protection bit time
–
–
–
–
80
1100
ms
–
Blank check: main block
–
–
–
–
3.2
–
ms
–
CRC check time: main block
–
–
–
–
5
–
ms
–
CRC check time: full chip (512Mb)
–
–
–
–
5
–
s
–
PROGRAM/ERASE cycles (per block)
–
–
–
100,000
–
–
cycles
–
Parameter
Erase
Program
Single-word program
Buffer Program
Word write to buffer program (tWHWH1)
Effective write to buffer program per word
(tWHWH1)
Nonvolatile protection
Blank Check, CRC, and Program/Erase Endurance
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. Typical values measured at room temperature and nominal voltages (VCC = 3V).
2. Typical and maximum values are sampled, but not 100% tested.
3. Erase to suspend is the time between an initial BLOCK ERASE or ERASE RESUME command and a subsequent ERASE SUSPEND command.
4. This typical value allows an ERASE operation to progress to completion--it is important
to note that the algorithm might never finish if the ERASE operation is always suspended less than this specification.
75
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Package Dimensions
Package Dimensions
Figure 27: 56-Pin TSOP – 14mm x 20mm (Package Code: JS)
2X Ø1.2
Pin A1 ID
1.1 ±0.1
56
1
0.5 TYP
11.8
CTR
56X 0.22 ±0.05
28
14 ±0.1
29
56X 0.1 ±0.05
16.2 CTR
18.4 ±0.1
20 ±0.2
0.1 A
0.15 ±0.05
See Detail A
0.25 Gage plane
Seating plane
0.1 ±0.05
For reference
only
A
0.6 ±0.1
Detail A
Notes:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. All dimensions are in millimeters.
2. Pin A1 ID diameter is 1mm.
3. New package assembly site has effected an ASE process change (original ASE process is
Amkor). The package shows two eject pins on the package mark: one in the corner by
pin 56 and one in the corner by pin 28, each with diameter 2mm x 1.2mm.
4. Package width and length include mold flash.
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Package Dimensions
Figure 28: 64-Ball LBGA – 11mm x 13mm (Package Code: PC)
Seating plane
A
64X Ø0.60
Dimensions apply
to solder balls postreflow on Ø0.50 SMD
ball pads.
0.08 A
Ball A1 ID
(covered with SR)
8 7 6 5 4 3 2
Ball A1 ID
1
A
B
C
7 CTR
D
E
13 ±0.1
F
G
1 TYP
H
1.3 ±0.1
1.0 TYP
7 CTR
0.49 ±0.05
11 ±0.1
Note:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. All dimensions are in millimeters.
77
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Package Dimensions
Figure 29: 56-Ball VFBGA 7mm x 9mm (Package Code: PN)
Seating plane
A
56X Ø0.375
Dimensions
apply to solder
balls post-reflow
on Ø0.35 SMD
ball pads.
0.08 A
Ball A1 ID
Ball A1 ID
8
7
6
5
4
3
2
1
A
B
C
5.6 CTR
D
E
9 ±0.1
F
G
0.8 TYP
H
0.9 ±0.1
0.8 TYP
5.6 CTR
0.2 MIN
7 ±0.1
Note:
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
1. All dimensions are in millimeters.
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512Mb: x16, 3V, MT28FW, Automotive Parallel NOR
Revision History
Revision History
Rev. H –10/18
• Updated CFI Query System Interface Information table
Rev. G –05/18
• Added Important Notes and Warnings section for further clarification aligning to industry standards
Rev. F – 11/16
• Updated 56-pin dimension drawing
• Added Note 4 to 56-pin dimension drawing
Rev. E – 9/15
• Updated Table 31: Read AC Characteristics – tPAGE in Read AC Characteristics
Rev. D – 01/15
• Promoted the document from Preliminary to Production status
Rev. C – 12/14
• Updated Figure 4: 64-Ball LBGA in Signal Assignments
• Updated Table 21: CFI Query System Interface Information in Common Flash Interface
• Updated Table 23: Primary Algorithm-Specific Extended Query Table in Common
Flash Interface
• Updated Table 28: Input/Output Capacitance in Absolute Ratings and Operating Conditions
• Updated Table 31: Read AC Characteristics – V CC = V CCQ = 2.7-3.6V in Read AC Characteristics
• Updated Table 32: Read AC Characteristics – V CCQ = 1.65V-VCC in Read AC Characteristics
• Updated Table 36: Program/Erase Characteristics in Program/Erase Characteristics
Rev. B – 07/14
• Preliminary status
Rev. A – 05/14
• Initial release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: 09005aef85b07bee
mt28fw_512mb_automotive.pdf - Rev. H 10/18 EN
79
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